InP基共振隧穿二极管太赫兹振荡器的设计与实现  

Design and realization of InP-based resonant tunneling diode THz oscillator

作　　者：刘军 宋瑞良[1] 刘宁[1] 梁士雄 LIU Jun;SONG Rui-Liang;LIU Ning;LIANG Shi-Xiong(54th Research Institute,China Electronics Technology Group Corporation(CETC54),Beijing 100070,China;The National Key Laboratory of ASIC,Hebei Semiconductor Research Institute,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第五十四研究所北京研发中心,北京100070 [2]河北半导体技术研究所专用集成电路国家重点实验室,河北石家庄050051

出　　处：《红外与毫米波学报》2022年第2期443-447,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Key R&D Program of China(2018YFE0202500);National Key Research and Development Program of China(2017YFC08219);Manned Space Advanced Research Project(060401);Advanced Research Project of Civil Aerospace Technology(B0105)。

摘　　要：利用InP基共振隧穿二极管(RTD)和加载硅透镜的片上天线设计实现了超过1 THz的振荡器。采用Silvaco软件对RTD模型进行仿真研究,分析了不同发射区掺杂浓度、势垒层厚度、隔离层厚度以及势阱层厚度等对器件直流特性的影响规律。对研制的RTD器件直流特性测试显示:峰值电流密度J_(p)为359.2 kA/cm^(2),谷值电流密度J_(v)为135.8 kA/cm^(2),峰谷电流比PVCR为2.64,理论计算得到的器件最大射频输出功率和振荡频率(f_(max))分别为1.71 mW和1.49 THz。利用透镜封装的形式对采用Bow-tie片上天线和RTD设计的太赫兹振荡器进行封装,测试得到振荡频率超过1 THz,输出功率为2.57μW,直流功耗为8.33 mW,是国内首次报道超过1 THz的振荡器。An oscillator above 1 THz is designed and realized using InP-based resonant tunneling diode(RTD)and an on-chip antenna with Si-lens. The RTD model was built and studied with Silvaco software. The influences of the doping concentration of emitter,the thickness of barrier layer,space layer,and well layer on the DC characteristics of the device have been analyzed. The DC measurement of the RTD shows the peak current density J_(p)=359. 2 kA/cm^(2),the valley current density J_(v)= 135. 8 kA/cm^(2),and the peak-to-valley current ratio(PVCR)=2. 64. According to the measurement,the maximum RF output power and oscillation frequency(f_(max))are theoretically calculated,which are 1. 71 mW and 1. 49 THz,respectively. The oscillator with an on-chip bow-tie antenna and RTD is packaged with Si-lens. The measurement shows the output power is 2. 57μW at an operation frequency of above 1 THz,the DC power consumption is 8. 33 mW. This is the first reported oscillator of frequency above 1 THz in domestic.

关 键 词：太赫兹 共振隧穿二极管 振荡器 

分 类 号：O43[机械工程—光学工程]