一种基于n-ZnS/p-CuSCN纳米薄膜的高开关比和稳定性紫外光电探测器  

A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio

作　　者：魏瑶琪 全家乐 赵庆强 邹明琛 韩三灿 WEI Yao-qi;QUAN Jia-le;ZHAO Qing-qiang;ZHOU Ming-chen;HAN San-can(College of Materials and Chemistry,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]上海理工大学材料与化学学院,上海200093

出　　处：《发光学报》2022年第6期911-921,共11页Chinese Journal of Luminescence

基　　金：国家自然科学基金(51802195);上海市教委晨光学者项目(19CG53)资助。

摘　　要：通过原位生长法制备了一种CuSCN纳米薄膜紫外光电探测器,在-1 V偏压下,入射光为350 nm时,CuSCN紫外光电探测器的开关比~94,响应/恢复时间~1.41 s/1.44 s。但这种器件仍不能称之为一种高性能的光电探测器。为进一步提高CuSCN纳米薄膜的光电性能,我们制备了一种基于n-ZnS/p-CuSCN复合薄膜的紫外光电探测器,并对制备的样品进行了形貌、成分和性能分析。结果显示,在-1 V偏压下,入射波长为350 nm时,ZnS/CuSCN紫外光电探测器表现出比CuSCN紫外光电探测器更高的光电流和更低的暗电流,分别为1.22×10^(-5)A和4.8×10^(-9)A。基于ZnS/CuSCN纳米薄膜的紫外光电探测器开关比-2542,响应/恢复时间为0.47 s/0.48 s,在350 nm波长下具备最佳的响应度和探测率,分别为5.17 mA/W和1.32×10^(11) Jones。此外,n-ZnS/p-CuSCN复合薄膜在室温下性能稳定,具有作为高性能紫外探测器的潜力。Herein,We fabricated a CuSCN nanofilm ultraviolet(UV)photodetector(PD)using an in situ growth method.When the bias is-1 V and the incident light is 350 nm,the on/off ratio of the CuSCN PD is~94,and the rise/decay time is~1.41 s/1.44 s.However,such a device still cannot be called a high-performance photodetector.To improve the optoelectronic properties of CuSCN nanofilm further,we fabricated a UV photodetector based on n-ZnS/p-CuSCN composite nanofilm and analyzed its morphology,composition,and properties.The photocurrent and dark current of the ZnS/CuSCN UV photodetectors are 1.22×10^(-5)A and 4.8×10^(-9)A,respectively(at-1 V,350 nm).The ZnS/CuSCN nanofilms􀆳on/off ratio of~2542 and rise/decay time is 0.47 s/0.48 s.Besides,the n-ZnS/p-CuSCN nanofilm UV PDs have the best responsivity and detectivity at 350 nm with 5.17 mA/W and 1.32×10^(11) Jones,re⁃spectively.In addition,the n-ZnS/p-CuSCN composite film is stable at room temperature,which indicates its great potential as a high-performance UV photodetector.

关 键 词：光电探测器 P-N结 ZnS/CuSCN 开关比 

分 类 号：TN23[电子电信—物理电子学]