高温对MOSFET ESD防护器件维持特性的影响  

Effect of high-temperature on holding characteristics in MOSFET ESD protecting device

作　　者：李明珠 蔡小五[1] 曾传滨[1] 李晓静 李多力[1] 倪涛[1] 王娟娟 韩郑生[1,2] 赵发展 Li Ming-Zhu;Cai Xiao-Wu;Zeng Chuan-Bin;Li Xiao-Jing;Li Duo-Li;Ni Tao;Wang Juan-Juan;Han Zheng-Sheng;Zhao Fa-Zhan(Key Laboratory of Science and Technology on Silicon Devices,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,硅器件中心重点实验室,北京100029 [2]中国科学院大学,北京100049

出　　处：《物理学报》2022年第12期489-496,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61804168)资助的课题。

摘　　要：静电放电(electro-static discharge,ESD)防护结构的维持电压是决定器件抗闩锁性能的关键参数,但ESD器件参数的热致变化使得防护器件在高温环境中有闩锁风险.本文研究了ESD防护结构N沟道金属-氧化物-半导体(N-channel metal oxide semiconductor,NMOS)在30—195℃的工作温度下的维持特性.研究基于0.18μm部分耗尽绝缘体上硅工艺下制备的NMOS器件展开.在不同的工作温度下,使用传输线脉冲测试系统测试器件的ESD特性.实验结果表明,随着温度的升高,器件的维持电压降低.通过半导体工艺及器件模拟工具进行二维建模及仿真,提取并分析不同温度下器件的电势、电流密度、静电场、载流子注入浓度等物理参数的分布差异.通过研究以上影响维持电压的关键参数随温度的变化规律,对维持电压温度特性的内在作用机制进行了详细讨论,并提出了改善维持电压温度特性的方法.The holding voltage of electrostatic discharge(ESD) protecting structure is the critical parameter to determine the latch-up performance of the protecting device, but the thermal change of ESD device parameters lead the protecting device to suffer latch-up risk at high ambient temperature. In this paper, the holding characteristics of the ESD protecting device at various ambient temperatures ranging from 30 ℃ to 195 ℃ are studied. The investigated ESD structure is the N-channel metal oxide semiconductor(NMOS) transistors fabricated with the 0.18 μm partially depleted silicon-on-insulator process. The ESD characteristics of the device are measured by the transmission line pulse test system at different ambient temperatures. The test results show that the holding voltage(VH) decreases with temperature increasing. The TCAD simulation is carried out to support and analyze the experimental results, and the same trend of VH versus temperature is obtained.Through the analysis of simulation results and theoretical derivation, the underlying physical mechanisms related to the effects of temperature on VH and holding current(IH) are discussed in detail. When the drain is subjected to the same current pulsing and the Source and Body are both grounded, the distributions of current density, electric potential, and injected electron density of NMOS at various temperatures are extracted and analyzed. When the Drain, Source, and Body are all grounded, the distributions of the electrostatic field at various temperatures are extracted and analyzed. The distribution of electric potential in NMOS indicates that the voltage drop on the Drain-Body junction(VDB) is affected by ambient temperature significantly, and the variation of VDB dominates the variation trend of VH with temperature increasing. The reducing electrostatic field and increasing injected electron density with temperature decreasing contribute to the decreasing of VDB.The trend of IH and parasitic Body resistance(RBody) weakens the temperature dependence of the VH

关 键 词：静电放电 金属-氧化物-半导体场效应晶体管 维持电压 高温 

分 类 号：TN386[电子电信—物理电子学]