一种低电磁干扰的高边驱动电路  

A High-Side Driver Circuit with Low Electromagnetic Interference

作　　者：赵皆辉 刘兴辉[1] 阮昊 霍建龙 张治东 赵宏亮[1] ZHAO Jiehui;LIU Xinghui;RUAN Hao;HUO Jianlong;ZHANG Zhidong;ZHAO Hongliang(School of Physics,Liaoning University,Shenyang 110000,China;Jiangsu Jicui Intelligent Integrated Circuit Design Technology Research Institute Co.,Ltd.,Wuxi 214000,China)

机构地区：[1]辽宁大学物理学院,沈阳110000 [2]江苏集萃智能集成电路设计技术研究所有限公司,江苏无锡214000

出　　处：《电子与封装》2022年第6期53-59,共7页Electronics & Packaging

基　　金：辽宁省教育厅科学研究项目(LJC201904)。

摘　　要：提出了一种低电磁干扰(Electromagnetic Interference,EMI)的高边驱动电路。针对传统设计中存在的振荡器工作过程中产生的高电压或电流尖峰引起严重EMI以及宽电压范围下MOSFET栅击穿等问题,提出了一种新的系统方案及电路结构,同时从傅氏级数及空间交变电磁场两个方面解释了抖频技术如何抑制EMI。基于Hynix 0.18μm BCD工艺进行设计与仿真,仿真结果表明,在5 MHz的振荡器频率下抖频后的各奇次谐波频带均被展宽,在三次谐波处降幅高达12.3 d B,大大改善了系统的电磁兼容性,同时电路可以在电源电压为4.5~37 V的范围内正常工作。该设计方案可以广泛用于高压集成电路设计领域。A high-side driver circuit with low electromagnetic interference(EMI)is presented.In order to optimize serious EMI caused by the high voltage or current spike and MOSFET gate breakdown in a wide power supply range in the process of oscillator operation for the traditional design,a new solution and a circuit structure are proposed.At the same time,how the jitter frequency technology can suppress EMI is explained from two aspects of Fourier series and spatial alternating electromagnetic field.The design and simulation are performed based on Hynix 0.18μm BCD process.The simulation results show that the odd harmonic bands are broadened after dithering at the oscillator frequency of 5 MHz,and the decrease is up to 12.3 d B at the third harmonic,which greatly improve the electromagnetic compatibility of the system.Furthermore,the circuit can work normally in the supply voltage of 4.5-37 V.The system design solution can be widely used in the field of high voltage IC design.

关 键 词：抖频 高边驱动 EMI抑制 电源电压 

分 类 号：TN433[电子电信—微电子学与固体电子学]