超薄Hf_(0.5)Zr_(0.5)O_(2)铁电薄膜制备及在ETSOI器件应用研究  

Fabrication of Ultra-Thin Hf_(0.5)Zr_(0.5)O_(2) Film and Its Application on ETSOI Devices

作　　者：李昱东[1,4,5] 张兆浩 闫江 唐波 张青竹[1,2,4] 罗军[1,4] Li Yudong;Zhang Zhaohao;Yan Jiang;Tang Bo;Zhang Qingzhu;Luo Jun(Integrated Circuit Advanced Process Center(ICAC),Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;State Key Laboratory of Advanced Materials for Smart Sensing,General Research Institute for Nonferrous Metals,Beijing 100088,China;School of Information Science and Technology,North China University of Technology,Beijing 100144,China;Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所集成电路先导工艺研发中心,北京100029 [2]有研科技集团有限公司智能传感功能材料国家重点实验室,北京100088 [3]北方工业大学电子信息工程学院,北京100144 [4]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [5]中国科学院大学,北京100049

出　　处：《稀有金属》2022年第4期480-487,共8页Chinese Journal of Rare Metals

基　　金：国家自然科学基金项目(61904194,61874135,91964202);国家科技重大专项项目(2017ZX02315001-1);中国科学院集成电路创新研究院基金项目(Y9YC04X02);中国科学院青年创新促进基金项目(Y9YQ01R004);中国科学院微电子与器件与集成重点实验室开放课题项目(Y9YS05X002)资助。

摘　　要：基于超薄铁电薄膜材料的场效应晶体管(field effect transistor,FET)是集成电路在5 nm及以下技术节点实现低功耗和高性能的技术方案之一。然而,由于铁电薄膜存在“死层”(dead layer)效应,造成超薄铁电薄膜保持足够铁电性以应用于先进技术节点器件上困难。针对超薄铁电薄膜面临的问题,本文首先探索了原子层沉积法(atomic layer deposition,ALD)制备Hf_(0.5)Zr_(0.5)O_(2)铁电薄膜的工艺,发现沉积Hf_(0.5)Zr_(0.5)O_(2)薄膜厚度与ALD生长周期呈现良好的线性关系,其生长速率约为0.136 nm·cycle^(-1)。接着对Hf_(0.5)Zr_(0.5)O_(2)薄膜的铁电性进行了表征,发现8 nm Hf_(0.5)Zr_(0.5)O_(2)薄膜比4 nm和10 nm薄膜具有更大的晶粒和更强的铁电性,并且通过横向对比发现4 nm的Hf_(0.5)Zr_(0.5)O_(2)薄膜依然具有较好的铁电性(2P_(r)=9.3μC·cm^(-2))。最后,将4 nm Hf_(0.5)Zr_(0.5)O_(2)薄膜材料集成到n型超薄绝缘体上硅(extra-thin silicon on insulator,ETSOI)器件中,实现室温下的亚阈值摆幅(sub-threshold slop,SS)达到57.4 mV·dec^(-1),突破了玻尔兹曼限制(60 mV·dec^(-1)),为超薄Hf_(0.5)Zr_(0.5)O_(2)铁电薄膜材料以及负电容ETSOI器件研究和应用提供重要的技术基础。Under appropriate annealing temperature,zirconium(Zr)doped hafnium oxide(HfO)thin films exhibited ferroelectricity.A ferroelectric hafnium zirconium oxide(HfZrO)film had strong ferroelectric-localized field,which was theoretically demonstrated that it could introduce a negative capacitance(NC)by coupling a precisely set capacitor.The NC effect was giving a promising novel solution for the gate control engineering of the complementary metal oxide semiconductor(CMOS)field effect transistor(FET),which made CMOS FET had a record operation speed.FET with ferroelectric thin film was a hotspot in the research of CMOS FET scaling down.Field effect transistor based on ultra-thin ferroelectric film was becoming one of the most promising solutions for low-power and high-performance integrated circuits for future 5 nm node and beyond.However,due to the existence of the“dead layer”effect,it was a difficult thing for the fabrication and application of nano-scale ferroelectric film on advanced technology nodes.When the film thickness was under 5 nm,the dead layer effect was a remarkable problem.To solve the problems,the fabrication,characterization and application of ultra-thin Hf_(0.5)Zr_(0.5)O_(2)ferroelectric films had been carried out in this paper.Firstly,the atomic layer deposition(ALD)process had been optimized,and a series of Hf_(0.5)Zr_(0.5)O_(2)films with different thickness were grown on the silicon wafer.The ellipsometer and transmission electron microscope(TEM)were used to measure the thickness of the thin film.It showed a very good linear relationship with ALD cycle,which owed an average growth rate of 0.136 nm·cycle^(-1).Then the capacitors with metal-insulator-metal(MIM)structure were fabricated to investigate the influence of the thickness on the thin film ferroelectricity.The thickness of the films were 4,8 and 10 nm respectively.An instrument for ferroelectric parameter measurement was used to characterize the capacitance and ferroelectric properties of MIM thin films.TEM was used to detect the thickness

关 键 词：Hf_(0.5)Zr_(0.5)O_(2) 原子层沉积 铁电 超薄绝缘体上硅(ETSOI) 负电容 低功耗 

分 类 号：TB34[一般工业技术—材料科学与工程]