双向Buck/Boost变换器中SiC MOSFET串扰分析与抑制  

Analysis and Suppression of Crosstalk of SiC MOSFETs in Bidirectional Buck/Boost Converters

作　　者：张昊[1] 孟润泉[1] 李新宇 曹锐[2] 郭卓燕 Zhang Hao;Meng Runquan;Li Xinyu;Cao Rui;Guo Zhuoyan(College of Electrical and Power Engineering,Taiyuan University of Technology,Taiyuan 030024,China;Taiyuan Youte Aoke Electronic Technology Co.,Ltd.,Taiyuan 030006,China)

机构地区：[1]太原理工大学电气与动力工程学院,太原030024 [2]太原市优特奥科电子科技有限公司,太原030006

出　　处：《半导体技术》2022年第5期360-368,共9页Semiconductor Technology

基　　金：国家自然科学基金资助项目(U1610121);山西省科技重大专项资助项目(20181102028)。

摘　　要：由于寄生参数的影响,SiC MOSFET应用于双向Buck/Boost变换器时会出现串扰现象,在高速开关过程中会产生额外损耗甚至发生误导通,影响变换器的安全可靠运行。针对双向Buck/Boost变换器在Buck模式及Boost模式运行时出现的串扰电压,首先提取相关寄生电容和寄生电感参数,建立了含寄生参数的LTspice仿真模型,并搭建实验测试装置验证了模型的正确性。然后利用所建LTspice模型分析寄生电感参数对串扰电压的影响规律,提出了在Buck模式和Boost模式中分别采用不同的串扰抑制方法,并验证了所提方法的有效性。Due to the influence of parasitic parameters,SiC MOSFETs will have crosstalk when applied to bidirectional Buck/Boost converter,and will produce additional loss or even misleading during the high-speed switching process,which will affect the safe and reliable operation of the converter.Aiming at crosstalk voltages of bidirectional Buck/Boost converter in Buck mode and Boost mode,firstly,the relevant parasitic capacitance and parasitic inductance parameters were extracted,the LTspice simulation model with parasitic parameters was established,and an experimental test device was built to verify the correctness of the model.Then the influence of parasitic inductance parameters on the crosstalk voltage was analyzed by using the established LTspice model.Different crosstalk suppression methods in Buck mode and Boost mode were proposed,and the effectiveness of the proposed method was verified.

关 键 词：SiC MOSFET 寄生参数 串扰抑制 Buck/Boost 驱动电路 

分 类 号：TN386[电子电信—物理电子学]