快恢复二极管技术综述  

Review of Technology of Fast Recovery Diode

作　　者：王学良 钱敏 WANG Xueliang;QIAN Min(Department of Optics and Engineering Electronic Information,City University of Suzhou,Suzhou 215104,China;Advanced Semiconductor Manufacturing Co.,Ltd.,Shanghai 200233,China)

机构地区：[1]苏州城市学院光学与电子信息工程学院,江苏苏州215104 [2]上海先进半导体制造有限公司,上海200233

出　　处：《河南科技》2022年第12期36-41,共6页Henan Science and Technology

基　　金：江苏省高校自然科学基金(19KJD510006)。

摘　　要：本研究重点介绍少数载流子寿命控制技术中的全域少数载流子技术和局域少数载流子技术及不同细分的少数载流子寿命控制技术的优缺点,并从阳极发射效率控制技术(如PIN、LLD、SSD、SPEED、MPS等)出发,介绍各类快恢复二极管技术的历史演变及其结构的研究进展。同时,对比分析了另一种快恢复二极管的重要技术——高压钝化技术,如SIPOS技术及PI技术。然后介绍国内外快恢复二极管在各类电力电子领域的应用现状。最后阐释了快恢复二极管技术面临的技术挑战和未来发展趋势。The study mainly introduces the varities of minor carries lifetime control technology eg non local minor crries lifetime control technology and local minor carries lifetime control technology,and also advantages and disadvantages of all sorts minor carries lifetime control technology.From point view of anode emitting effiency control technology eg PIN,LLD,SSD,SPEED and MPS,introduces the development of those relative fast recovery diodes and illustrates those relative schematic disgrams.Brieves another important passivation technology for FRD eg SIPOS and PI.Introduces the main application of FRD(fast recovery diode).And finally discusses the challenges of current FRD(fast recovery diode) technology and it’s future trend.

关 键 词：快恢复二极管 寿命控制 阳极发射 高压钝化 

分 类 号：TN31[电子电信—物理电子学]