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作 者:程宽 赵洪峰[1] 周远翔[2] Cheng Kuan;Zhao Hongfeng;Zhou Yuanxiang(The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment School of Electrical Engineering Xinjiang University,Urumqi 830046 China;State Key Laboratory of Control and Simulation of Power Systems and Generation Equipment Department of Electrical Engineering Tsinghua University,Beijing 100084 China)
机构地区:[1]新疆大学电气工程学院电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室,乌鲁木齐830046 [2]清华大学电机工程与应用电子技术系电力系统及发电设备控制和仿真国家重点实验室,北京100084
出 处:《电工技术学报》2022年第13期3413-3421,共9页Transactions of China Electrotechnical Society
基 金:国家自然科学基金资助项目(51762038)。
摘 要:ZnO压敏电阻是避雷器的核心部件,其性能的好坏直接影响着避雷器的电气性能。因此,该文致力于通过B_(2)O_(3)的掺杂以改善直流ZnO压敏电阻的非线性和高荷电率下的老化稳定性,并利用扫描电子显微镜(SEM)、X射线衍射(XRD)和电容-电压(C-V)等特性测试研究B_(2)O_(3)掺杂对直流ZnO压敏电阻的微观结构和电气特性的影响。然后,在115℃、0.95E;的条件下对直流ZnO压敏电阻进行1000h的直流加速老化试验,以验证其在高荷电率下的老化稳定性。试验结果表明,B_(2)O_(3)的掺杂提高了晶界层的势垒高度,改善了直流ZnO压敏电阻的非线性特性,并降低了其在高荷电率下的老化系数。ZnO varistor is the core component of the arrester, and its performance can directly improve the electrical characteristics of the arrester. Therefore, this article is devoted to improving the non-linearity of DC ZnO varistor and the aging stability under high charge rate through the doping of B_(2)O_(3). The effects of B_(2)O_(3)doping concentration on the microstructure and electrical properties of ZnO varistors were studied by scanning electron microscopy(SEM), X-ray diffraction(XRD) and capacitance-voltage(C-V). Then, the DC accelerated aging test of ZnO varistors was carried out at 115℃and 0.95 E1mA for 1000 h. The results show that the doping of B_(2)O_(3)increases the barrier height of the grain boundary layer, improves the nonlinear characteristics of ZnO varistors, and reduces its aging coefficient at high charge rate. The research results are of great significance for prolonging the service life of arrester and improving the safe and reliable operation of power system.
分 类 号:TB321[一般工业技术—材料科学与工程]
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