GaN HEMT射频等效电路建模研究  

Modeling research of GaN HEMT RF equivalent circuit

作　　者：李超 王军[1] LI Chao;WANG Jun(School of Information Engineering,Southwest University of Science and Technology,Mianyang 621010,China)

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《传感器与微系统》2022年第7期40-43,共4页Transducer and Microsystem Technologies

摘　　要：为了研究GaN高电子迁移率晶体管(HEMT)的射频特性,研究了GaN HEMT电路模型建模方法。综合分析了GaN HEMT器件的物理结构、非线性电容、陷阱效应、自热效应及噪声等特性,提出了一种GaN HEMT射频大信号等效电路模型拓扑。完成了直流及散射参数的拟合,建立Ids方程,通过仿真工具软件ADS2016的仿真结果与实测的10μm×90μm GaN HEMT功率器件的数据对比,验证了所建模型的有效性和准确性。In order to study on RF characteristics of GaN HEMT,modeling method of GaN HEMT circuit model is studied.Physical structure,nonlinear capacitance,trap effect,self-heating effect and noise of GaN HEMT are comprehensively analyzed,and a large signal equivalent circuit model topology of GaN HEMT is proposed.Fitting of direct current(DC)and scattering parameters are completed.Ids equation is set up.By comparing simulation results of the simulation tool software ADS2016 with the measured data of 10μm×90μm GaN HEMT power devices,verify the effectiveness and accuracy of the model.

关 键 词：GAN高电子迁移率晶体管 电路模型 参数提取 散射参数 

分 类 号：TN386[电子电信—物理电子学]