离子束辅助沉积Ta/Zr薄膜及栅网应用研究  

Research on Ion Beam Assisted Deposition of Ta/Zr Film and Grid Application

作　　者：杨鹏云 张宏志[1] 李文旭[1] 邱立[1] YANG Peng-yun;ZHANG Hong-zhi;LI Wen-xu;QIU Li(Beijing Vacuum Electronics Research Institute,Beijing 100015,China)

机构地区：[1]北京真空电子技术研究所,北京100015

出　　处：《真空电子技术》2022年第3期69-74,91,共7页Vacuum Electronics

摘　　要：利用离子束辅助沉积方法在Si片上沉积Ta/Zr薄膜,研究辅源离子能量对薄膜表面形貌和粗糙度的影响,通过扫描电镜和光学表面轮廓仪对其表面形貌和粗糙度进行表征。实验结果表明:辅源离子能量对薄膜的生长有很大的影响。Ta/Zr薄膜的沉积速率随着辅源能量的增加而减小,表面粗糙度随着辅源能量的增加先减小后增加,在离子能量为200 eV时,沉积得到的Ta/Zr薄膜较好,这主要因为在溅射过程中,适当的辅源离子能量可促进原子在薄膜表面的迁移,从而减少空隙的生成,引起薄膜表面致密化。在此基础上将该制备工艺固化并应用到栅控脉冲行波管中,该应用得到了较好的效果。Ta/Zr films were deposited on Si substrates by ion beam assisted deposition.The effects of auxiliary ion energy on the morphology and roughness of the film surface were researched by SEM and optical surface profiler characterization.The experimental results show that the energy of auxiliary source ions has a great influence on the growth of thin films.With the increase of auxiliary source energy,the deposition rate of Ta/Zr films decreases,while the surface roughness first decreases and then increases.With an ion energy of 200 eV,superior Ta/Zr films can be obtained.This is mainly because appropriate auxiliary source ion energy in sputtering process can promote atom migration on film surface,so as to reduce void formation and cause film surface densification.On this basis,the preparation process is fixed and applied to grid-controlled pulse traveling wave tubes,and good results are obtained.

关 键 词：离子束辅助沉积 栅控脉冲行波管 Ta/Zr薄膜 栅网膜层 

分 类 号：O484[理学—固体物理]