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作 者:黄湘俊 邸啸 刘娅[2] 李鑫 易拥洁 吴鹏程 安兴 朱鑫 HUANG Xiangjun;DI Xiao;LIU Ya;LI Xin;YI Yongjie;WU Pengcheng;AN Xing;ZHU Xin(United Microelectronics Center Co., Ltd., Chongqing 400060, China;The 26th Institute of China Electronics Technology Group Corporation, Chongqing 400060, China)
机构地区:[1]联合微电子中心有限公司,重庆400060 [2]中国电子科技集团公司第二十六研究所,重庆400060
出 处:《压电与声光》2022年第3期397-402,共6页Piezoelectrics & Acoustooptics
摘 要:该文介绍了一种由5×5个半径为200μm圆形阵列组成,应用于水听器的高性能压电微机电系统(MEMS)声波器件,尺寸为3 mm×3 mm。采用钪掺杂(质量分数为20%)增强了AlN薄膜的压电系数,并通过双电极结构配置及优化结构尺寸来增强声压作用下的电信号输出,以实现压电MEMS声波器件具有更好的接收灵敏度。声波器件在空气中的接收灵敏度为-166.8 dB(Ref.1 V/μPa),比相同结构基于AlN薄膜的声波器件约高2.6 dB。在50 Hz~3 kHz带宽范围内,器件灵敏度曲线变化小于1.5 dB,具有平坦的声学响应。结果表明,基于Al_(0.8)Sc_(0.2)N薄膜的压电MEMS声波器件具有更高的接收灵敏度,经水密封装制成的水听器可应用于管道泄漏探测及海洋噪声监测等工程中。This article presents a high performance piezoelectric MEMS acoustic device for hydrophone applications,which consists of 5×5 circular arrays with a diameter of 200μm,and the size of the device is 3 mm×3 mm.The piezoelectric coefficient of AlN films is enhanced by using scandium doping with a mass fraction of 20%,and the electrical signal output under acoustic pressure is enhanced by a two-electrode structure configuration and optimized structure size to achieve better reception sensitivity of piezoelectric MEMS acoustic wave devices.The acoustic device has a receiving sensitivity of-166.8 dB(Ref.1 V/μPa)in air,which is about 2.6 dB higher than that of the same structure based on AlN film.The device has a flat acoustic response with a sensitivity curve change of less than 1.5 dB in the bandwidth range of 50 Hz to 3 kHz.The results show that the piezoelectric MEMS acoustic wave device based on the Al_(0.8)Sc_(0.2)N film has higher receiving sensitivity,and the hydrophone sealed by the watertight package can be used for pipeline leakage detection,marine noise monitoring and other engineering applications.
关 键 词:压电微机电系统(MEMS) 声波器件 Al_(0.8)Sc_(0.2)N薄膜 阵列结构 灵敏度 水听器
分 类 号:TN384[电子电信—物理电子学] TN64[交通运输工程—水声工程] TB565.1[理学—物理]
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