基于多层二硒化钨的高性能场效应晶体管的实验优化和理论模拟  

Experimental Optimization and Theoretical Simulation of High Performance Field-effect Transistors Based on Multilayer Tungsten Diselenide

作　　者：张义超 赵付来 王宇 王亚玲 沈永涛[1,2] 冯奕钰 封伟[1,2] ZHANG Yichao;ZHAO Fulai;WANG Yu;WANG Yaling;SHEN Yongtao;FENG Yiyu;FENG Wei(School of Materials Science and Engineering,Tianjin University,Tianjin 300354,China;Key Laboratory of Advanced Ceramics and Processing Technology,Ministry of Education,Tianjin University,Tianjin 300072,China)

机构地区：[1]天津大学材料科学与工程学院,天津300354 [2]天津大学先进陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《高等学校化学学报》2022年第6期166-176,共11页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金(批准号:52103093,52173078,52130303);中国博士后科学基金(批准号:2021M702424)资助.

摘　　要：采用微机械剥离法制备了基于不同厚度的高质量WSe_(2)纳米片的场效应晶体管(WSe_(2)-FETs),研究了其性能的影响因素.通过调控WSe_(2)纳米片及介电层的厚度、测试温度及退火处理等,结合理论模拟分析,获得了WSe_(2)-FETs的最佳电学性能.最终,基于7层WSe_(2)纳米片的场效应晶体管表现出最优异的电学性能,室温下载流子迁移率可达93.17 cm^(2)·V^(‒1)·s^(‒1);在78 K低温下,载流子迁移率高达482.78 cm^(2)·V^(‒1)·s^(‒1).The field-effect transistors(FETs)were prepared based on high-quality WSe_(2) nanosheets of different thicknesses by mechanical exfoliation method and the influencing factors of their performance were investigated.By regulating the WSe_(2) nanosheet and dielectric layer substrate thickness,testing temperature,annealing treatment,combined with theoretical simulation analysis,the best electrical performance of WSe^(2)-FETs was obtained.Finally,the obtained 7-layer WSe_(2) nanosheets exhibit the most excellent electrical properties with carrier mobility up to 93.17 cm^(2)·V^(‒1)·s^(‒1)at room temperature and 482.78 cm^(2)·V^(‒1)·s^(‒1)at low temperature of 78 K.

关 键 词：微机械剥离法 二维材料 二维过渡金属硫族化合物 载流子迁移率 开关比 

分 类 号：O649[理学—物理化学]