高效率蓝光硅光探测器外延结构及特性研究  

A study on the epitaxial structure and characteristics of high-efficiency blue silicon photodetectors

作　　者：陈伟帅 王浩冰 陶金 高丹[1] 吕金光[1] 秦余欣[1] 郭广通 李香兰 王强 张军[3] 梁静秋[1] 王惟彪[1] CHEN Wei-shuai;WANG Hao-bing;TAO Jin;Gao Dan;LV Jin-guang;QIN Yu-xin;GUO Guang-tong;LI Xiang-lan;WANG Qiang;ZHANG Jun;LIANG Jing-qiu;WANG Wei-biao(State Key Laboratory of Applied Optics,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;University of Chinese Academy of Sciences,Beijing 100049,China;Collage of Science&Engineering,Jinan University,Guangzhou Key Laboratory of Visible Light Communication Engineering Technology,Guangzhou 510632,China)

机构地区：[1]中国科学院长春光学精密机械与物理研究所,应用光学国家重点实验室,长春130033 [2]中国科学院大学,北京100049 [3]暨南大学理工学院,广州市可见光通信工程技术重点实验室,广州510632

出　　处：《中国光学》2022年第3期568-591,共24页Chinese Optics

基　　金：国家重点研发计划(No.2018YFB1801902,No.2018YFB1801901,No.2019YFB2006003);吉林省科技发展计划项目(No.20190302062GX);国家自然科学基金(青年基金)(No.12004139);广东省科技计划项目资助项目(No.2016B010111003)。

摘　　要：为了实现硅基雪崩光电二极管蓝光波段(400~500 nm)高光响应度,设计了SACM型基本器件结构,探究了倍增层厚度对器件的雪崩击穿电压及光电流增益的影响及倍增层掺杂浓度对光响应度的影响,综合考虑光响应度和击穿电压的因素,结果表明:当表面非耗尽层掺杂浓度为1.0×10^(18) cm^(−3)、厚度为0.03μm;吸收层掺杂浓度为1.0×10^(15) cm^(−3)、厚度为1.3μm;场控层掺杂浓度为8.0×10^(16) cm^(−3)、厚度为0.2μm;倍增层掺杂浓度为1.8×10^(16) cm^(−3)、厚度为0.5μm时,器件具有较低的击穿电压V_(br-apd)=34.2 V。当V_(apd)=0.95 V_(br-apd),该结构在蓝光波段具较高的光响应度(SR=3.72~6.08 A·W^(−1))。上述研究结果对高蓝光探测响应度Si-APD实际器件的制备具有一定的参考价值。In order to achieve high spectral responsivity of the silicon avalanche photodiode in blue band(400−500 nm),Separated Absorption Control Multiplication(SACM)basic device structure was designed.Based on multiple physical models,the effect of the thickness on the avalanche breakdown voltage and the photocurrent gain of the device and the effect of the doping concentration of the multiplication layer on the optical responsivity were investigated.Comprehensively considering the factors of light responsivity and breakdown voltage,the results show that the device has a low breakdown voltage V_(br-apd)=34.2 V when the doping concentration of the surface non-depleted layer is 1.0×10^(18) cm^(−3),and the thickness is 0.03μm;the doping concentration of absorption layer is 1.0×10^(15) cm^(−3),the thickness is 1.3μm,the doping concentration of field control layer is 8.0×10^(16) cm^(−3),the thickness is 0.2μm and the doping concentration of double layer is 1.8×10^(16) cm^(−3) and the thickness is 0.5μm.When V_(apd)=0.95V_(br-apd),it has higher optical responsivity in blue band,i.e.SR is 3.72~6.08 A·W^(−1).The above research results provide certain theoretical reference for the preparation of practical Si-APD devices with high blue light detection responsivity.

关 键 词：雪崩光电二极管 硅 光谱响应度 

分 类 号：TP394.1[自动化与计算机技术—计算机应用技术] TH691.9[自动化与计算机技术—计算机科学与技术]