氮化硅覆铜基板活性钎焊研究进展  

Research Status of Silicon Nitride Copper-bonding Substrate Based on AMB Process

作　　者：李伸虎 李文涛 陈卫民 王捷[1] 吴懿平[1] LI Shenhu;LI Wentao;CHEN Weimin;WANG Jie;WU Yiping(Huazhong University of Science and Technology,Wuhan 430074,China;Guangzhou XianYi Electronics Technology Co.,Ltd.,Guangzhou 510000,China)

机构地区：[1]华中科技大学材料科学与工程学院,湖北武汉430074 [2]广州先艺电子科技有限公司,广东广州510000

出　　处：《电子工艺技术》2022年第4期187-191,203,共6页Electronics Process Technology

摘　　要：随着新一代SiC基功率模块器件朝着高功率密度、高工作温度方向快速发展,具备更高可靠性的Si_(3)N_(4)-AMB基板已逐步替代传统的DBC基板,成为SiC器件的首选。从SiC器件对高可靠性封装基板的需求出发,介绍了近年来Si_(3)N_(4)-AMB覆铜基板的研究现状,主要包括Si_(3)N_(4)-AMB覆铜基板的制备工艺、铜/氮化硅陶瓷界面的空洞率控制及高低温冲击可靠性三大方面。With the rapid development of the new SiC power module devices towards high power density and high operating temperature,Si_(3)N_(4)-AMB substrate with higher reliability has gradually replaced the traditional DBC substrate and become the first choice of SiC devices.Starting from the demand of SiC devices for high reliability packaging substrate,the research status of Si_(3)N_(4)-AMB copper-bonding substrate in recent years is introduced,mainly including the preparation process of Si_(3)N_(4)-AMB copper-bonding substrate,the void rate control of copper/silicon nitride ceramic interface and the thermal shock reliability.

关 键 词：Si_(3)N_(4)-AMB基板 制备工艺 空洞率 温度冲击 可靠性 

分 类 号：TN3[电子电信—物理电子学]