溅射温度对ITO/Ag/ITO多层复合薄膜的结构和光电性能的影响  

Effect of Sputtering Temperature on the Structure and Photoelectric Properties of ITO/Ag/ITO Multilayer Composite Films

作　　者：程媛媛 黄瑜佳 朱归胜[1] 徐华蕊[1] 万乐 焦培文 汪坤喆 CHENG Yuanyuan;HUANG Yujia;ZHU Guisheng;XU Huarui;WAN Le;JIAO Peiwen;WANG Kunzhe(Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China;Guangxi Zhongpei Optoelectronic Technology Co., Ltd., Laibin 546100, China)

机构地区：[1]桂林电子科技大学材料科学与工程学院,电子信息材料与器件教育部工程研究中心,广西信息材料重点实验室,桂林541004 [2]广西中沛光电科技有限公司,来宾546100

出　　处：《人工晶体学报》2022年第6期1028-1033,共6页Journal of Synthetic Crystals

基　　金：广西科技计划项目(桂科AA21077018,桂科AB20297053);国家自然科学基金重点项目(U21A2065);“科技助力经济2020”重点专项(SQ2020YFF0425649);广西信息材料重点实验室基金(201002-Z)。

摘　　要：本文采用直流磁控溅射分层溅射制备了氧化铟锡(ITO)/银(Ag)/ITO多层复合薄膜。系统研究了溅射温度对ITO/Ag/ITO多层复合薄膜的结构和光电性能影响。采用ITO(m(In_(2)O_(3))∶m(SnO_(2))=9∶1;直径60 mm)靶材和Ag(纯度99.999%;直径60 mm)靶材分层溅射,使ITO薄膜和Ag薄膜依次沉积在钠-钙玻璃基片上。结果表明,溅射温度对该薄膜的形貌和结构具有显著的影响。在中间Ag薄膜和顶层ITO薄膜的溅射温度均为120℃时,薄膜表面晶粒形貌由类球形转变为菱形,此时薄膜方阻为3.68Ω/Sq,在488 nm处透射率为88.98%,且品质因数为0.03Ω^(-1),实现了低方阻高可见光透射率ITO/Ag/ITO多层复合薄膜的制备。Indium tin oxide(ITO)/Silver(Ag)/ITO multilayer composite films were sputtered by DC magnetron sputtering.The effect of sputtering temperature on the structure and photoelectrical properties of ITO/Ag/ITO multilayer composite films was systematically studied.ITO(m(In_(2)O_(3))∶m(SnO_(2))=9∶1;60 mm diameter)and Ag(purity 99.999%;60 mm diameter)targets were layered to deposit ITO and Ag films sequentially on a sodium-calcium glass substrate.The film was characterized and analyzed by X-ray diffractor,SEM,UV spectrophotometer,and a four-probe test system.The results show that the sputtering temperature has a significant effect on the morphology and structure of the film.When the sputtering temperature of Ag film and ITO film is 120℃,the surface morphology of the film changes from spherical to prism.The square resistance of the film is 3.68Ω/Sq,the transmittance is 88.98%at 488 nm,and the quality factor is 0.03Ω^(-1).Compared with other sputtering temperatures,the visible light transmittance and electrical conductivity of the films are greatly improved.ITO/Ag/ITO multilayer composite film is an ideal transparent conductive material for large-size touch panels due to its excellent photoelectric performance.

关 键 词：磁控溅射 分层溅射 复合薄膜 ITO薄膜 Ag薄膜 溅射温度 

分 类 号：TB383.2[一般工业技术—材料科学与工程]