MEMS微压压力传感器的灵敏度优化  

Optimization of sensitivity of MEMS micro-pressure sensor

作　　者：彭时秋 朱赛宁 PENG Shiqiu;ZHU Saining(Wuxi KI Electronics Co.,Ltd.,Wuxi 214000,China)

机构地区：[1]无锡中微晶园电子有限公司,江苏无锡214000

出　　处：《光学精密工程》2022年第13期1582-1590,共9页Optics and Precision Engineering

基　　金：江苏省科技计划资助项目(No.BA2018059)。

摘　　要：为提高微机电系统微压压力传感器的灵敏度,根据硅压阻式压力传感器的工作原理介绍了影响压力传感器灵敏度的主要因素。使用COMSOL Mutilphysics有限元仿真软件开展压力敏感膜层厚度、压敏电阻摆放位置及压敏电阻长度对灵敏度影响规律的研究。根据仿真结果,减小压力敏感膜层厚度至15μm,设置压敏电阻长度为120μm,并将压敏电阻摆放至距压敏膜层边缘10μm的位置,完成了一款量程为40 kPa的MEMS硅压阻式微压压力传感器的结构优化,有效提升了传感器的灵敏度。测试结果表明,该压力传感器的灵敏度达到0.444 mV/kPa,相较于常规同量程灵敏度为0.35 mV/kPa的压力传感器,提升了26.8%。上述优化结果基本满足MEMS微压压力传感器的高灵敏度、高线性度等要求。Aiming to increase the sensitivity of a micro-electro-mechanical system(MEMS)micro-pres⁃sure sensor,the primary factors that influence sensor sensitivity were introduced according to the working principle of a silicon piezoresistive pressure sensor.Subsequently,simulations were conducted using the COMSOL Multiphysics software to analyze the influence of film thickness,optimal position,and length of the varistor.Based on the simulation results,the sensitivity of a 40 kPa MEMS micro-pressure sensor was optimized.The sensitivity of the micro-pressure sensor could be enhanced effectively by reducing the film thickness to 15μm,setting the length of the varistor to 120μm,and strategically placing the varistor 10μm away from the edge of the film.The test results of the optimized sensor show that by optimizing the structure design,a sensitivity of 0.444 mV/kPa can be achieved for the MEMS micro-pressure sensor.The sensitivity of the optimized sensor is 26.8%greater than that of the standard sensor,which has a sen⁃sitivity of 0.35 mV/kPa.Thus,the system requirements of higher sensitivity and linearity can be satisfied using the optimized MEMS micro-pressure sensor.

关 键 词：微机电系统 微压压力传感器 COMSOL mutilphysics 灵敏度优化 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]