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作 者:庞磊 程洋 赵武 谭少阳 郭银涛 李波 王俊 周大勇 Pang Lei;Cheng Yang;Zhao Wu;Tan Shaoyang;Guo Yintao;Li Bo;Wang Jun;Zhou Dayong(College of Electronics and Information Engineering,Sichuan University,Chengdu 610065,China;Suzhou Everbright Photonics Co.,Ltd.,Suzhou 215163,China;Gusu Laboratory of Materials,Suzhou 215123,China)
机构地区:[1]四川大学电子信息学院,四川成都610065 [2]苏州长光华芯光电技术股份有限公司,江苏苏州215163 [3]材料科学姑苏实验室,江苏苏州215123
出 处:《红外与激光工程》2022年第6期179-184,共6页Infrared and Laser Engineering
摘 要:中红外量子级联激光器在红外对抗、痕量气体检测、自由空间光通信等领域具有广阔的应用前景,采用MOCVD生长量子级联激光器的方法具有生产效率高、可做再生长、便于多组分生长等优点。报道了可室温连续波工作的中红外量子级联激光器,波长4.6μm,采用MOCVD生长应变补偿的InGaAs/InAlAs材料。实验探究了不同掺杂对芯片性能的影响,通过优化掺杂浓度提升了器件性能。腔长3 mm,脊宽13μm的芯片在288 K的温度下,脉冲模式下最大峰值功率达到722 mW,电光转换效率和阈值电流密度分别为6.3%和1.04 kA/cm^(2),在连续模式下功率输出达到364 mW。文中成功实现了用MOCVD生长中红外量子级联激光器,为中红外波段的激光应用提供了技术支撑。Mid-infrared quantum cascade laser has various application prospects in infrared countermeasures,trace gas detection, free space optical communication and other fields. The method of using MOCVD to grow quantum cascade lasers has the advantages of high production efficiency, convenience for regrowth and multicomponents growth. This paper reported a mid-infrared quantum cascade laser capable of continuous-wave operation at room temperature, with a wavelength of 4.6 μm, using MOCVD to grow strain-compensated InGaAs/InAlAs materials. The experiment explored the impact of different doping on chip performance, and determined that the device performance can be improved by optimizing the doping concentration. The maximum peak power of the chip with a cavity length of 3 mm and a ridge width of 13 μm in pulse mode was 722 mW at a temperature of 288K, the wall-plug efficiency and threshold current density were 6.3% and 1.04 kA/cm^(2),respectively, and the power output reached 364 mW in continuous-wave operation. This article has successfully realized the growth of mid-infrared quantum cascade laser by MOCVD, which provides technical support for laser applications in the mid-infrared band.
关 键 词:中红外 量子级联激光器 金属有机物化学气相沉积 掺杂优化 连续波工作
分 类 号:TN248.4[电子电信—物理电子学]
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