铝栅极降低氧化铟锡薄膜表面电阻  

Aluminum Grid Reduce the Sheet Resistance of Indium Tin Oxide Thin Films

作　　者：付潇潇 郑卓 王取泉[1] 李建民 肖旭东 FU Xiaoxiao;ZHENG Zhuo;WANG Ququan;LI Jianmin;XIAO Xudong(School of Physics and Technology,Wuhan University,Wuhan 430072,China)

机构地区：[1]武汉大学物理科学与技术学院,武汉430072

出　　处：《真空科学与技术学报》2022年第6期430-435,共6页Chinese Journal of Vacuum Science and Technology

基　　金：湖北省技术创新重大专项项目(2019AAA020);武汉市应用基础前沿项目(2019010701011420)。

摘　　要：大面积钙钛矿电池组件效率一直比小面积电池最高效率低10%左右,其中透明导电氧化物(TCO)电极的横向电阻是构成串联电阻增加的主要因素。本文采用湿法刻蚀的方法在超白玻璃上制备了深达1-2μm的凹槽,横向宽度最小为10μm,随后蒸镀金属铝,射频溅射沉积氧化铟锡(ITO)薄膜,通过调控刻蚀各参数,得到良好的铝栅极形状。对比分析有无铝栅极的ITO薄膜,结果表明,有铝栅极的ITO薄膜相较无铝栅极的ITO薄膜,平均透过率下降约3.5%,横向电阻从17.4Ω降至2.4Ω,得到明显改善。并可通过调控刻蚀厚度,可使横向电阻进一步降低,从而显著提升ITO薄膜在太阳能电池领域里作为透明导电电极时横向电子收集能力,对以玻璃为基底的薄膜太阳能电池大面积产业化应用提供了可能。The efficiency of large-area perovskite cell modules has been about 10% lower than that of smallarea cells, in which the transverse resistance of transparent conductive oxide(TCO) electrode is the main factor for the increase of series resistance. In this paper, grooves with a depth of 1-2 μm and a minimum transverse width of 10 μm were prepared on ultra-white glass by wet etching, and then aluminum was evaporated, and Indium Tin Oxide(ITO) films were deposited by RF sputtering. By adjusting the etching parameters, a good aluminum grid shape was obtained. The results show that the average transmittance of ITO thin films with the aluminum grid is about 3.5% lower than that of ITO thin films without the aluminum grid. The transverse resistance is significantly ameliorated from 17.4 to 2.4 Ω, which may be further reduced by the future etching thickness adjustment and contribute to the significant improvement of the horizontal electron-collection ability in ITO thin films. This work makes it possible for large-scale industrial applications in glass-based thin-film solar cells.

关 键 词：超白玻璃 湿法刻蚀 氧化铟锡薄膜 太阳能电池 

分 类 号：TK519[动力工程及工程热物理—热能工程]