^(60)Co γ射线对增强型GaN HEMT直流特性的影响  

Influences of ^(60)Co γ-Rays on DC Characteristics of Enhancement GaN HEMT

作　　者：邱一武 吴伟林 颜元凯 周昕杰 黄伟 QIU Yiwu;WU Weilin;YAN Yuankai;ZHOU Xinjie;HUANG Wei(China Key System&Integrated Circuit Co.,Ltd.,Wuxi 214072,China;School of Microelectronics,Fudan University,Shanghai 200443,China)

机构地区：[1]中科芯集成电路有限公司,江苏无锡214072 [2]复旦大学微电子学院,上海200443

出　　处：《电子与封装》2022年第7期44-48,共5页Electronics & Packaging

摘　　要：利用^(60)Coγ射线对P型栅增强型氮化镓高电子迁移率晶体管(GaN HEMT)开展零偏置状态下总剂量辐射试验及常温退火试验,测试GaN HEMT直流特性参数对总剂量效应(TID)的响应规律。试验结果表明,γ射线辐照后器件阈值电压、跨导峰值和饱和漏极电流发生不同程度的退化,而栅泄露电流和导通电阻变化甚微。在剂量为0.6 Mrad(Si)的条件下,经过120 h的退火试验,器件阈值电压未发生明显的恢复,跨导峰值反而有轻微退化的趋势。从试验数据可知,器件直流特性退化主要是由于辐照引起二维电子气(2DEG)浓度下降,载流子迁移率降低,感生界面态陷阱导致。研究结果对GaN HEMT器件宇航应用可靠性的评估给予了有益参考。Using ^(60)Coγ-rays to carry out total dose radiation test and room temperature annealing test on P-type gate enhancement GaN high electron mobility transistor(HEMT)under zero bias state,the response of DC characteristic parameters of GaN HEMT to total ionizing dose(TID)is investigated.The experimental results show that the threshold voltage,peak transconductance and saturation drain current of the device are degraded in different degrees afterγ-ray irradiation,while the gate leakage current and conduction resistance change very little.At the dose of 0.6 Mrad(Si),after 120 h annealing tests,the threshold voltage of the device does not recover obviously,and the peak transconductance tends to degenerate slightly instead.From the experimental data,it can be seen that the degradation of the DC characteristics of the device is mainly due to the decrease of the concentration of two-dimensional electron gas(2DEG)caused by irradiation,the decrease of carrier mobility,and the induction of interfacial state traps.The results of the study give a useful reference for the evaluation of the reliability of GaN HEMT devices for aerospace applications.

关 键 词：增强型GaN HEMT ^(60)Coγ射线辐照 直流特性测试 退火测试 

分 类 号：TN306[电子电信—物理电子学]