纳米器件单粒子瞬态仿真研究  

Simulation Research on the Single Event Transient in Nano-Devices

作　　者：殷亚楠 王玧真 邱一武 周昕杰 郭刚[2] YIN Ya'nan;WANG Yunzhen;QIU Yiwu;ZHOU Xinjie;GUO Gang(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214072,China;China Institute of Atomic Energy,Beijing 102413,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214072 [2]中国原子能科学研究院,北京102413

出　　处：《电子与封装》2022年第7期57-63,共7页Electronics & Packaging

基　　金：抗辐射应用技术创新中心创新基金(KFZC2021010202)。

摘　　要：利用计算机辅助设计软件,研究了不同条件下28 nm体硅器件的单粒子瞬态(SET)效应,分析了不同器件间距、线性能量转移值和粒子入射角度对器件SET效应的影响。随着器件漏极间距的减小,SET脉冲幅度和脉冲宽度随之减小。与垂直入射的情况相比,倾角入射下SET脉冲幅度和宽度的减小程度更加明显,电荷共享效应更加显著。仿真结果表明,合理调节反相器相异节点的器件间距,利用器件间的电荷共享可以有效减弱重离子产生的SET脉冲,减少单粒子效应的反应截面。The single event transient(SET)effects of 28 nm bulk silicon devices under different conditions are studied using computer aided design software.The effects of device spacing,linear energy transfer value and particle incidence angle on the SET effects are analyzed.As the device drain spacing decreases,the SET pulse amplitude and pulse width decrease.Compared with the situation of vertical incidence,the decreases of the SET pulse amplitude and pulse width are more obvious at inclined incidence,and the charge sharing effect is more significant.The simulation results show that the reasonable adjustment of the device spacing of different nodes of the inverter and the use of charge sharing between devices can effectively attenuate the SET pulse generated by heavy ions and reduce the reaction cross section of single event effect.

关 键 词：单粒子瞬态 辐射效应仿真 电荷共享 

分 类 号：TN406[电子电信—微电子学与固体电子学]