Oxidation-enhanced bonding strength of Cu sinter joints during thermal storage test  

作　　者：Yue Gao Jinting Jiu Chuantong Chen Katsuaki Suganuma Rong Sun Zhi-Quan Liu 

机构地区：[1]Shenzhen Institute of Advanced Electronic Materials,Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China [2]Senju Metal Industry Co.,Ltd.,Senju Hashido-cho 23,Adachi-ku Tokyo 120-8555,Japan [3]The Institute of Scientific and Industrial Research(ISIR),Osaka University,Mihogaoka 8-1,Ibaraki,Osaka 567-0047,Japan [4]Shenzhen College of Advanced Technology,University of Chinese Academy of Sciences,Shenzhen 518055,China

出　　处：《Journal of Materials Science & Technology》2022年第20期251-255,共5页材料科学技术（英文版）

基　　金：the Guangdong Provincial Key Laboratory Fund(Grant No.2014B030301014).

摘　　要：With the development in next-generation semiconductor power devices,the power devices based on silicon carbide(SiC)and gallium nitride(GaN)are expected to replace the traditional Si-based power devices[1–6].However,the foreseeable harsh operating environment such as heavy thermal-load or extremely temperature cycle required more reliable interconnection technology[4,7-9].

关 键 词：INTERCONNECTION THERMAL BONDING 

分 类 号：TN303[电子电信—物理电子学]