0.1 GHz~18 GHz单电源宽带低噪声放大器  

0.1 GHz ~ 18 GHz Single Supply Broadband Low Noise Amplifier

作　　者：杨楠[1] 杨琦[1] 刘鹏 YANG Nan;YANG Qi;LIU Peng(the 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团第十三研究所,河北石家庄050051

出　　处：《现代信息科技》2022年第8期45-47,52,共4页Modern Information Technology

摘　　要：基于GaAs增强型pHEMT工艺,设计了一款单电源供电、工作频率覆盖0.1 GHz~18 GHz单片集成宽带低噪声放大器芯片。在同一芯片上集成分布式低噪声放大器和有源偏置电路,通过有源偏置电路为分布式放大器提供栅压实现放大器单电源供电。在片测试结果表明,放大器在+5 V工作电压下,工作电流60 mA,在0.1 GHz~18 GHz工作频段范围内实现小信号增益18 dB,输出P1 dB(1 dB压缩点输出功率)典型值12 dBm,噪声系数典型值2.5 dB。放大器的芯片尺寸为2.4 mm×1.0 mm×0.07 mm。Based on GaAs enhanced pHEMT process, a monolithic integrated broadband low noise amplifier chip with single power supply and working frequency covering 0.1 GHz ~ 18 GHz is designed. The distributed low noise amplifier and active bias circuit are integrated on the same chip. It provides the gate voltage for the distributed amplifier to realize the single power supply of the amplifier through active bias circuits. The on-chip test results show that under the working voltage of + 5 V, the working current of the amplifier is 60 m A, the small signal gain is 18 db in the working frequency band of 0.1 GHz ~ 18 GHz, the typical value of output P1 db(1d B compression point output power) is 12 dbm,and the typical value of noise coefficient is 2.5 d B. The chip size of the amplifier is 2.4 mm×1 0 mm×0. 07 mm.

关 键 词：增强型pHEMT 单电源 宽带 分布式放大器 有源偏置 

分 类 号：TN722[电子电信—电路与系统]