基于三维模型的NPN双极型晶体管电离辐射效应仿真模拟  

Simulation of Ionizing Radiation Effect of NPN Bipolar Junction Transistor Based on Three-dimensional Model

作　　者：陕宇皓 刘延飞 郑浩 彭征 SHAN Yuhao;LIU Yanfei;ZHENG Hao;PENG Zheng(Xi'an Research Institule of High Technology,Xi'an,710025,CHN)

机构地区：[1]西安高新技术研究所,西安710025

出　　处：《固体电子学研究与进展》2022年第3期177-183,共7页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61834004,61701505)。

摘　　要：为更加迅速可靠地评估星用双极型晶体管抗电离辐射损伤性能,建立了三维NPN晶体管模型,并对其电离辐射效应进行了数值模拟。仿真计算了电离辐射在晶体管中产生的氧化物正电荷陷阱以及界面陷阱,以此模拟不同总剂量、剂量率电离辐照对晶体管的损伤;以漂移扩散模型计算了晶体管典型性能的响应,验证了晶体管的总剂量效应和低剂量率损伤增强效应。结果表明晶体管对电离辐射敏感的区域位于基区和发射结区附近的Si/SiO_(2)界面,从Gummel曲线提取的归一化增益发现,电离辐射损伤可能使晶体管增益降低50%以上,这对晶体管性能影响很大。该方法可以在降低成本、缩短周期的前提下,为晶体管抗电离辐射可靠性评估提供合理的技术支撑和可借鉴的理论数据。To evaluate the reliability of satellite bipolar transistors against ionizing radiation dam-age more quickly and reliably,a three-dimensional model of NPN transistors was established and the effects of ionizing radiation were numerically simulated. In the simulation experiment,the oxide positive charge trap and interface trap produced by ionizing radiation in the transistor were simulated firstly,so as to simulate the damage of ionizing radiation to the transistor at different total doses and dose rates. Then the drift-diffusion model was used to calculate the response of typical transistor properties,and the total dose effect and low dose rate damage enhancement effect of the transistor were verified.The results show that the sensitive area of the transistor to ionizing radiation is located at the Si/SiO_(2) interface near the base area and the emitter junction area,and the analysis of the normalized gain extracted from Gummel curve shows that ionizing radiation damage may reduce the gain of the transistor by more than 50%,which has a great impact on the performance of the transistor. This method can provide technical support and theoretical data for the reliability evaluation of transistors against ionizing radiation on the premise of reducing the cost and shortening the cycle time.

关 键 词：NPN双极型晶体管 三维模型 总剂量效应 低剂量率损伤增强效应 仿真模拟 

分 类 号：TL99[核科学技术—核技术及应用] TN325.2[电子电信—物理电子学]