4英寸f_(max)=620 GHz的0.25μm InP DHBT  

4-inch 0.25 μm InP DHBT with f_(max)=620 GHz

作　　者：戴姜平 常龙[1] 李征 王学鹏 林浩 程伟[1] DAI Jiangping;CHANG Long;LI Zheng;WANG Xuepeng;LIN Hao;CHENG Wei(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2022年第3期191-195,共5页Research & Progress of SSE

摘　　要：报道了一款在101.6 mm(4英寸)InP晶圆上制备的特征尺寸为0.25μm的磷化铟双异质结双极型晶体管。采用发射极自对准技术和介质钝化工艺,器件的发射极典型尺寸为0.25μm×3.00μm,最大电流增益为25,当发射极电流密度为10μA/μm^(2)时,器件的击穿电压达到了4.2 V,电流增益截止频率为390 GHz,最高振荡频率为620 GHz。建立了用于提取器件寄生参数的小信号等效电路模型,模型的仿真结果与高频实测数据具有很好的拟合精度。An InP double heterojunction bipolar transistor with a characteristic size of 0.25 μm fabricated on 101.6 mm(4-inch)InP wafer was reported in this paper. Using emitter self-alignment technology and dielectric passivation process,the typical emitter size of device is 0.25 μm × 3.00 μm,and the maximum current gain is 25.When the emitter current density is 10 μA/μm^(2),the breakdown voltage can reach 4.2 V,the current gain cutoff frequency is 390 GHz,and the maximum oscillation frequency is 620 GHz. A small signal equivalent model has been developed to extract parasitic components in device,and the simulation results of the model have good agreement with RF measured data.

关 键 词：磷化铟双异质结双极型晶体管 自对准 介质钝化 小信号模型 

分 类 号：TN322[电子电信—物理电子学] TN605