基于GaN微米阵列结构的单芯片白光LED有源区InGaN/GaN多量子阱结构设计  

Design of InGaN/GaN MQWs Structures for Monolithic Phosphor-free White LEDs Based on GaN Micro-arrays

作　　者：王永嘉 杨旭[1,2] 李金钗 黄凯[1,2] 康俊勇 WANG Yong-jia;YANG Xu;LI Jin-chai;HUANG Kai;KANG Jun-yong(Engineering Research Center of Micro-nano Optoelectronic Materials and Devices,Ministry of Education,Fujian Key Laboratory of Semiconductor Materials and Applications,CI Center for OSED,Department of Physics,Xiamen University,Xiamen 361005,China;Tan Kah Kee Innovation Laboratory,Future Display Institue of Xiamen,Xiamen 361005,China)

机构地区：[1]厦门大学物理学系,微纳光电子材料与器件教育部工程研究中心,福建省半导体材料及应用重点实验室,半导体光电材料及其高效转换器件协同创新中心,福建厦门361005 [2]厦门市未来显示技术研究院嘉庚创新实验室,福建厦门361005

出　　处：《发光学报》2022年第7期1130-1138,共9页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2021YFB3600101);国家自然科学基金(61874090);福建省自然科学基金(2021J01008);厦门市重大科技项目(3502Z20191016)资助。

摘　　要：通过模拟仿真对双波长堆叠的c面InGaN/GaN多量子阱(MQWs)发光二级管的载流子浓度、自发辐射复合率以及极化电场等进行了研究。结果表明,通过调节双波长堆叠的InGaN多量子阱的阱层和垒层厚度,可调控载流子特别是空穴在量子阱有源区的分布,实现双波长发光峰比例调制。进而考察了在相同外延条件下生长的半极性面InGaN/GaN堆叠量子阱LED的发光特性。在此基础上,提出基于多波长堆叠InGaN/GaN多量子阱结构的c面和{1011}或{1122}半极性面混合的单芯片白光LED设计方案,通过调节c面发光光谱在混合光谱中的比例,可获得覆盖大部分可见光波段、色温从4500~9000 K可调、且显色指数最高可达91.3的白光。The carrier concentration,spontaneous emission recombination rate and polarization field of dual-wavelength stacked c-plane InGaN/GaN multiple quantum wells(MQWs)light emitting diode(LED)are simulated with Crosslight APSYS software.The results show that the distribution of carriers,especially holes,in InGaN MQWs can be modified by adjusting the thickness of the well layer and barrier layer.Thus,the illumination in different spectral regimes can be balanced.Furthermore,the optical properties of semipolar InGaN/GaN LEDs with stacked MQWs grown under the same epitaxial conditions are analyzed.Finally,monolithic phosphor-free white LEDs with triplewavelength stacked MQWs based on GaN micro arrays are proposed,in which the micro arrays consist of{1011}or{1122}semipolar facets and c faces.By adjusting the proportion of c-plane illumination,a white LED with color temperature of ~6000 K and high color rendering index of ~91.3 can be achieved.

关 键 词：单芯片白光LED 半极性面 INGAN 极化效应 

分 类 号：O482.31[理学—固体物理]