Monolithic GaAs/Si V-groove depletion-type optical phase shifters integrated in a 300 mm Si photonics platform  

作　　者：YOUNGHYUN KIM DIDIT YUDISTIRA BERNARDETTE KUNERT MARINA BARYSHNIKOVA REYNALD ALCOTTE CENK IBRAHIM OZDEMIR SANGHYEON KIM SEBASTIEN LARDENOIS PETER VERHEYEN JORIS VAN CAMPENHOUT MARIANNA PANTOUVAKI 

机构地区：[1]IMEC,Heverlee B-3001,Belgium [2]Current address:Department of Photonics and Nanoelectronics,BK21 FOUR ERICA-ACE Center,Hanyang University,Ansan 15588,Republic of Korea [3]Current address:School of Electrical Engineering,Korea Advanced Institute of Science and Technology(KAIST),Daejeon 34141,Republic of Korea

出　　处：《Photonics Research》2022年第6期1509-1516,共8页光子学研究（英文版）

基　　金：IMEC’s industry affiliation R&D program,National Research Foundation of Korea;Ministry of Science and ICT,South Korea(2021R1G1A1091912)。

摘　　要：We demonstrate monolithically integrated n-GaAs/p-Si depletion-type optical phase shifters fabricated on a 300 mm wafer-scale Si photonics platform.We measured the phase shifter performance using Mach–Zehnder modulators with the GaAs/Si optical phase shifters in both arms.A modulation efficiency of V_(π)L as low as 0.3 V·cm has been achieved,which is much lower compared to a carrier-depletion type Si optical phase shifter with pn junction.While propagation loss is relatively high at.5 d B∕mm,the modulator length can be reduced by the factor of.2 for the same optical modulation amplitude of a Si reference Mach–Zehnder modulator,owing to the high modulation efficiency of the shifters.

关 键 词：GAAS/SI MODULATOR optical 

分 类 号：TN623[电子电信—电路与系统] TN256