雾化辅助化学气相沉积法氧化镓薄膜生长研究  

Gallium Oxide Thin Film Prepared by Atomization-Assisted Chemical Vapor Deposition

作　　者：罗月婷 肖黎 陈远豪 梁昌兴 龚恒翔 LUO Yueting;XIAO Li;CHEN Yuanhao;LIANG Changxing;GONG Hengxiang(College of Science,Chongqing University of Technology,Chongqing 400054,China;Chongqing Key Laboratory of Green Energy Materials Technology and System,Chongqing University of Technology,Chongqing 400054,China)

机构地区：[1]重庆理工大学理学院,重庆400054 [2]重庆理工大学,绿色能材料技术与系统重庆市重点实验室,重庆400054

出　　处：《人工晶体学报》2022年第7期1163-1168,共6页Journal of Synthetic Crystals

基　　金：重庆市自然科学基金博士后科学基金(cstc2021jcyj-bshX0219);重庆理工大学本科教育教学改革研究项目(2021YB46)。

摘　　要：采用自主设计搭建的雾化辅助化学气相沉积系统设备,开展了Ga_(2)O_(3)薄膜制备及其特性研究工作。通过X射线衍射研究了沉积温度、系统沉积压差对Ga_(2)O_(3)薄膜结晶质量的影响。结果表明,Ga_(2)O_(3)在425~650℃温度区间存在物相转换关系。随着沉积温度从425℃升高至650℃,薄膜结晶分别由非晶态、纯α-Ga_(2)O_(3)结晶状态向α-Ga_(2)O_(3)、β-Ga_(2)O_(3)两相混合结晶状态改变。通过原子力显微镜表征探究了生长温度对Ga_(2)O_(3)薄膜表面形貌的影响,从475℃升高至650℃时,薄膜表面粗糙度由26.8 nm下降至24.8 nm。同时,高分辨X射线衍射仪测试表明475℃、5 Pa压差条件下的α-Ga_(2)O_(3)薄膜样品半峰全宽仅为190.8″,为高度结晶态的单晶α-Ga_(2)O_(3)薄膜材料。Based on the self-assembled equipment,the properties of Ga_(2)O_(3) films prepared by atomization-assisted chemical vapor deposition(AA-CVD)method were studied.The effects of temperature and pressure difference on the crystal qualities of Ga_(2)O_(3) thin films were studied by X-ray diffraction.The results show that there is a phase structure conversion process of Ga_(2)O_(3),upon the temperature improving from 425℃to 650℃,the crystalline structure of the thin films transform from amorphous structure,pureα-Ga_(2)O_(3) crystal structure toα-Ga_(2)O_(3),β-Ga_(2)O_(3) two-phase mixed crystal structure.The effects of temperature on the thin films’surface morphology were characterized by atomic force microscope.When the temperature increases from 475℃to 650℃,the root-mean-square roughness of the thin films surface decrease from 26.8 nm to 24.8 nm.At the same time,the single crystal property of theα-Ga_(2)O_(3) thin film was measured by high resolution X-ray diffraction.The result shows that the thin film sample having a full width at half maximum of only 190.8″which prepared at the temperature of 475℃and at the pressure difference of 5 Pa,it can prove that theα-Ga_(2)O_(3) film is a highly crystallized single-crystal materia.

关 键 词：Ga_(2)O_(3) 薄膜 雾化辅助化学气相沉积 沉积温度 压差 单晶 半导体 

分 类 号：TQ133.51[化学工程—无机化工] TB383[一般工业技术—材料科学与工程]