多元施主掺杂对直流ZnO压敏陶瓷结构与电气性能的影响  

Effect of multi-donor doping on structure and electrical properties of DC ZnO varistor ceramics

作　　者：程宽 赵洪峰[1] 周远翔[2] CHENG Kuan;ZHAO Hongfeng;ZHOU Yuanxiang(The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment,School of Electrical Engineering,Xinjiang University,Urumqi 830046,China;State Key Laboratory of Control and Simulation of Power Systems and Generation Equipment,Department of Electrical Engineering,Tsinghua University,Beijing 100084,China)

机构地区：[1]新疆大学电气工程学院电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室,乌鲁木齐830046 [2]清华大学电机工程与应用电子技术系电力系统及发电设备控制和仿真国家重点实验室,北京100084

出　　处：《材料工程》2022年第8期153-159,共7页Journal of Materials Engineering

基　　金：国家自然科学基金资助项目(51762038)。

摘　　要：采用传统的陶瓷烧结工艺制备B_(2)O_(3),In_(2)O_(3),Al_(2)O_(3)多元施主掺杂的直流ZnO压敏陶瓷样品,考察不同掺杂比(0.1%~0.4%,摩尔分数)的B_(2)O_(3)对直流ZnO压敏陶瓷样品微观结构和电气性能的影响。利用X射线衍射仪、扫描电子显微镜、能量色散X射线光谱及数字源表等分别对样品的物相、微观形貌、成分及电性能进行表征。结果表明,多元施主掺杂剂(Al_(2)O_(3),In_(2)O_(3)和B_(2)O_(3))的共掺杂明显改善直流ZnO压敏陶瓷的综合性能,其中,Al_(3)+提高样品的电导率,降低样品的残压比;In^(3+)通过钉扎效应限制晶粒的生长,改善样品的电压梯度;B^(3+)的掺杂增加样品的表面态密度,提高势垒高度并有效抑制泄漏电流的增加。B_(2)O_(3)掺杂量为0.3%时,样品的综合性能最优:电压梯度为486 V/mm,泄漏电流密度为0.58μA/cm^(2),非线性系数为85,残压比为1.55。Direct-current ZnO varistor ceramic samples were prepared by traditional ceramic sintering process with B_(2)O_(3),In_(2)O_(3)and Al_(2)O_(3)multi-donor doping.The effects of B_(2)O_(3)doping ratio(0.1%-0.4%,molar fraction)on the microstructure and electrical properties of direct-current ZnO varistor ceramics were investigated.The phase,morphology,composition and electrical properties of the samples were characterized by X-ray diffraction,scanning electron microscopy,energy dispersive X-ray spectroscopy and digital source meter.The results show that the co-doping of multi-donor dopants(Al_(2)O_(3),In_(2)O_(3)and B_(2)O_(3))can significantly improve the comprehensive properties of direct-current ZnO varistor ceramics.Al^(^(3+))improves the conductivity of the samples and reduces the residual voltage ratio of the samples;In^(3+)restricts the growth of grains through pinning effect and improves the voltage gradient of the samples;the doping of B^(3+)improves the surface state density of the sample,increases the barrier height and effectively suppresses the increase in leakage current.When the doping amount of B_(2)O_(3)is 0.3%,the comprehensive performance of the sample is the best:the voltage gradient is 486 V/mm,the leakage current density is 0.58μA/cm^(2),the nonlinear coefficient is 85,and the residual voltage ratio is 1.55.

关 键 词：表面态密度 晶粒 电导率 残压比 

分 类 号：TM862[电气工程—高电压与绝缘技术]