砷化镓光导开关的损伤形貌研究  

Damage morphology of GaAs photoconductive switch

作　　者：沙慧茹 肖龙飞 栾崇彪[3] 冯琢云[1,2,3] 李阳凡 孙逊 胡小波[1,2] 徐现刚 Sha Huiru;Xiao Longfei;Luan Chongbiao;Feng Zhuoyun;Li Yangfan;Sun Xun;Hu Xiaobo;Xu Xiangang(Institute of Noval Semiconduction,Shandong University,Jinan 250100,China;State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China;Institute of Fluid Physics,CAEP,Mianyang 621900,China)

机构地区：[1]山东大学新一代半导体材料研究院,济南250100 [2]山东大学晶体材料国家重点实验室,济南250100 [3]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《强激光与粒子束》2022年第9期140-145,共6页High Power Laser and Particle Beams

基　　金：山东省重点研发计划项目(2019JMRH0901);山东省重点研发计划项目(2019JMRH0201)。

摘　　要：制作了同面型砷化镓光导开关,并测试了其导通性能。在偏置电压8 kV、激光能量10 mJ、重复频率10 Hz的条件下,研究了光导开关触发104次后器件表面的损伤形貌。利用激光扫描共聚焦显微镜,对电极边缘及电极间的损伤形貌进行分析,研究发现阳极边缘由于热积累形成热损伤,而阴极边缘的热损伤来源于热应力,并对电极间损伤形貌进行细致表征及分类。A lateral GaAs photoconductive switch was fabricated and its conduction performance was tested.To study device damage in long-term working environment,the switch is studied operating at 8 kV,10 Hz triggering frequency and 10 mJ triggering energy for 104 times.By means of confocal laser scanning microscopy,the damage morphology of the electrode edge and between the electrodes are analyzed.It is found that the thermal damage of the anode edge was caused by thermal accumulation,and the damage of the cathode edge was caused by thermal stress.The damage morphology between electrodes is characterized and classified in detail.

关 键 词：光导开关 砷化镓 损伤 形貌 热效应 

分 类 号：TN36[电子电信—物理电子学]