一种InP/InGaAs PIN光电探测器芯片的设计与制作  

Design and Fabrication of an InP/InGaAs PIN Photodetector Chip

作　　者：赵媛媛 武传龙 高鹏飞 Zhao Yuan-yuan;Wu Chuan-long;Gao Peng-fei(Weifang intellectual property protection center,Shandong Weifang 261000)

机构地区：[1]潍坊市知识产权保护中心,山东潍坊261000

出　　处：《电子质量》2022年第7期44-47,共4页Electronics Quality

摘　　要：In Ga As/In P PIN型光电探测器具有低暗电流、高灵敏度和响应速度快的特性,且能够吸收1-1.7μm红外波段光辐射,因此广泛应用于光纤通信系统。该文设计了一种平面型In Ga As/In P PIN光电探测器芯片,重点介绍了该芯片的外延结构与芯片加工工艺,并对芯片参数进行了测试。In GaAs/InP PIN photodetector has the characteristics of low dark current, high sensitivity and fast response speed, and can absorb light radiation in the 1-1.7 μm infrared band, so it is widely used in optical fiber communication systems. In this paper, a planar In GaAs/InP PIN photodetector chip is designed, the epitaxial structure and chip processing technology of the chip are mainly introduced, and the chip parameters are tested.

关 键 词：INGAAS/INP PIN 外延 工艺 

分 类 号：TN15[电子电信—物理电子学] TN382