1700V Primepack IGBT短路栅极振荡试验与分析  

Experiment and Analysis of 1 700V Primepack IGBT Short-circuit Gate Oscillation

作　　者：王禹 陈子墨 花清源 董志意 WANG Yu;CHEN Zimo;HUA Qingyuan;DONG Zhiyi(Nari Group(State Grid Electric Power Research Institute)Co.Ltd.,Jiangsu 211106,China;NARI-GEIRI Semiconductor Co.Ltd.,Jiangsu 211100,China)

机构地区：[1]南瑞集团有限公司(国网电力科学研究院有限公司),江苏211106 [2]南瑞联研半导体有限责任公司,江苏211100

出　　处：《集成电路应用》2022年第6期24-27,共4页Application of IC

摘　　要：阐述一类短路过程中发生的栅极振荡,该振荡属于射频振荡的一种,这种振荡会导致IGBT短路失效,通过理论分析射频振荡机理,确定振荡原因及能量流通路径,调整不同的栅极封装参数,确认对短路性能的影响,最终通过封装改进并进行了大量试验验证解决了栅极振荡问题。This paper describes that Gate Oscillation occurs in class A short-circuit process, which is a kind of RF oscillation, and this kind of oscillation will lead to the short-circuit failure of IGBT, the influence of different gate parameters on the short-circuit performance is confirmed, and the Gate Oscillation problem is solved by package improvement and. A large number of experiments have been carried out to verify that the gate oscillation problem has been solved.

关 键 词：栅极振荡 一类短路 短路特性 

分 类 号：TN386.2[电子电信—物理电子学]