基于果胶的阻变存储器件性能的优化  

Performance improvement of pectin-based resistive switching memory

作　　者：陶冶 赵金朋[1] 卞景垚 TAO Ye;ZHAO Jin-peng;BIAN Jing-yao(School of Physics,Northeast Normal University,Changchun 130024,China;National Demonstration Center for Experimental Physics Education(Northeast Normal University),Northeast Normal University,Changchun 130024,China)

机构地区：[1]东北师范大学物理学院,吉林长春130024 [2]东北师范大学物理学国家级实验教学示范中心(东北师范大学),吉林长春130024

出　　处：《物理实验》2022年第7期1-7,共7页Physics Experimentation

摘　　要：有机阻变存储器具有较好的柔性、延展性和生物相容性等特征,但其电阻转变参量的均一性较差.以银掺杂生物果胶(pectin)材料为介质层薄膜,利用旋涂和蒸发镀膜工艺制备了阻变存储器件.基于导电细丝模型分析了该阻变存储器的阻变机制,并通过对比实验探究了pectin和AgNO_(3)质量分数对阻变存储器工作性能的影响.此外,利用开启过程的限制电流对器件电阻值进行连续调节,实现了多级信息储存功能.实验表明:pectin作为无毒无害的生物材料可以应用于新型阻变存储器件中,利用金属离子掺杂技术可以对其阻变特性进行有效调控.Organic resistive switching memories are widely studied due to their excellent flexibility,ductility and biological compatibility,but the resistive switching parameters uniformity of them is poor.AgNO_(3) was doped into biological pectin to make a silver-doped pectin film,which was used as a dielectric layer to prepare an Ag/pectin-AgNO_(3)/ITO resistive memory.Based on the conductive filament model,the resistive switching mechanism of the resistive memory based on silver-doped pectin film was analyzed,and the effects of pectin and AgNO_(3) concentrations on the performance of resistive memory were explored.The multi-level resistance states memory was also obtained by regulating the limiting current.Experimental results showed that the pectin materials could be used as the insulating layer of resistive switching memories,and their resistive switching characteristics could be controlled by taking advantage of the Ag ions doping technology.

关 键 词：阻变忆阻器 果胶 AgNO_(3) 多阻态信息存储 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] O472.4[自动化与计算机技术—计算机科学与技术]