沉积条件对化学气相沉积SiC涂层沉积速率的影响  

Effect of deposition conditions on deposition rates of SiC coatings by chemical vapor deposition

作　　者：徐振男 张立强[1] 陈招科[2] 霍皓灵 张浩然 XU Zhennan;ZHANG Liqiang;CHEN Zhaoke;HUO Haoling;ZHANG Haoran(School of Mechanical and Electrical Engineering,Central South University of Forestry and Technology,Changsha 410004,China;State Key Laboratory of Powder Metallurgy,Central South University,Changsha 410083,China)

机构地区：[1]中南林业科技大学机电工程学院,湖南长沙410004 [2]中南大学粉末冶金国家重点实验室,湖南长沙410083

出　　处：《中南大学学报（自然科学版）》2022年第7期2467-2475,共9页Journal of Central South University:Science and Technology

基　　金：长沙市自然科学基金资助项目(kp2202288);湖南省教育厅科学研究重点项目(19A512)。

摘　　要：通过计算流体力学(CFD)仿真软件对大长径比(长度为2250 mm,直径为280 mm)的立式化学气相沉积炉进行有限元建模,仿真分析反应温度、载气H_(2)流量、炉压和基体数量等不同工艺条件对化学气相沉积法(CVD)制备碳化硅(SiC)涂层沉积速率和沉积均匀性的影响。研究结果表明:当反应温度为900~1150℃时,随着温度升高,SiC涂层沉积速率也随之增大;当反应温度为1200~1350℃时,随着温度升高,SiC涂层沉积速率反而降低;当反应温度小于1200℃时,SiC涂层沉积较均匀;当反应温度高于1200℃时,沉积均匀性变得较差;随着炉压增大,SiC涂层沉积速率逐渐降低,均匀性也逐渐变差;随载气H_(2)流量增加,SiC涂层沉积速率逐渐增大,在载气H_(2)流量为1000~1200 mL/min的条件下,SiC涂层沉积比较均匀;随着基体数量增多,SiC涂层沉积速率逐渐降低,且沉积均匀性变差。CVD SiC实验对比验证了有限模型的可靠性。The effects of process conditions including reaction temperature,carrier gas flow rates,pressure and the number of substrates on deposition rates and uniformity of silicon carbide(SiC)coatings of chemical vapor deposition(CVD)were analyzed by the finite element modeling on the vertical chemical vapor deposition vessel of a large diameter ratio(length of 2250 mm,diameter of 280 mm)established by using the computational fluid dynamics(CFD)simulation software.The results show that the deposition rates of SiC coatings increase with the increase of temperature at 900-1150℃.The deposition rates of SiC coatings decrease with the increase of temperature at 1200-1350℃.SiC coatings deposited are more uniform at the temperature of lower 1200℃and become worse at above 1200℃.The deposition rates of SiC coatings and uniformity gradually decrease with the increase of vessel pressure.The deposition rates of SiC coatings increase with the increase of carrier gas H_(2) flow rates and the SiC coatings deposited are relatively uniform at the carrier gas H_(2) flow rates of 1000-1200 mL/min.The deposition rates and uniformity of SiC coatings decrease with the increase of the number of substrates.The simulation results are compared with CVD SiC experiments to verify the reliability of the model.

关 键 词：化学气相沉积 碳化硅涂层 沉积速率 有限元仿真 

分 类 号：TQ127.2[化学工程—无机化工]