一种基于CMOS工艺的低相噪压控振荡器的设计  

Design of a Low Phase Noise Voltage Controlled Oscillator Based on CMOS Process

作　　者：齐贺飞[1] 王磊[1] 王鑫 王绍权[1] 张梦月 QI Hefei;WANG Lei;WANG Xin;WANG Shaoquan;ZHANG Mengyue(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《现代信息科技》2022年第12期52-55,共4页Modern Information Technology

摘　　要：基于标准CMOS工艺,设计了一款适用于无线通信的基于标准CMOS工艺的频带压控振荡器,该芯片的中心频率2.8 GHz,芯片面积0.5×0.5 mm^(2),典型功耗为11 mA@3.3 V。测试结果表明,在0.8 V~2.5 V的电压调节范围内,压控振荡器输出频率范围为2.3 GHz~3.3 GHz,通过电容阵列实现了1 GHz的调谐带宽,在2.8 GHz频率时的典型相位噪声为-81 dBc/Hz@10 kHz,压控振荡器的典型增益为40 MHz/V。Based on standard CMOS process,a band voltage controlled oscillator based on standard CMOS process for wireless communication is designed.The center frequency of the chip is 2.8 GHz.The chip area is 0.5×0.5 mm^(2),and the typical power consumption is 11 mA@3.3 V.The test results show that in the voltage regulation range of 0.8 V~2.5 V,the output frequency range of voltage controlled oscillator is 2.3 GHz~3.3 GHz,the tuning bandwidth of 1GHz is realized through capacitor array,and the typical phase noise at 2.8 GHz frequency is-81 dBc/Hz@10 KHz,the typical gain of voltage controlled oscillator is 40 MHz/V.

关 键 词：压控振荡器 可变电容 相位噪声 

分 类 号：TN752[电子电信—电路与系统]