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作 者:曾祥勇 许海仙 朱家旭[2,3] 张浩 崔嵩 李京伟[1] 汤文明[1,4] ZENG Xiangyong;XU Haixian;ZHU Jiaxu;ZHANG Hao;CUI Song;LI Jingwei;TANG Wenming(School of Materials Science and Engineering,Hefei University of Technology,Hefei 230009,Anhui,China;Hefei Shengda Electronic Technology Industry Co.Ltd.,Hefei 230088,Anhui,China;43 Institute,China Electronics Technology Group Corporation,Hefei 230088,Anhui,China;Anhui Province Key Laboratory of Microsystem,Hefei 230088,Anhui,China)
机构地区:[1]合肥工业大学材料科学与工程学院,安徽合肥230009 [2]合肥圣达电子科技实业有限公司,安徽合肥230088 [3]中国电子科技集团公司第43研究所,安徽合肥230088 [4]微系统安徽省重点实验室,安徽合肥230088
出 处:《陶瓷学报》2022年第4期539-550,共12页Journal of Ceramics
基 金:安徽省科技重大专项(202003a05020006);安徽省重点研发与开发计划(202004a05020022)。
摘 要:基板材料散热能力在很大程度上决定了电子器件的可靠性和寿命。陶瓷覆铜基板兼具优良的导热和绝缘性能,以及大电流承载能力和机械强度,成为大功率电子器件基板材料的不二选择,应用极其广泛。作为一种陶瓷与Cu箔结合的重要方法,活性金属钎焊(AMB)的可靠性优于直接覆铜板(DBC),但其界面结合强度受脆性相、残余热应力等因素的影响很大,有进一步提高的必要。介绍了AMB中的界面润湿、反应和残余应力问题;综述了目前国内外在提高AMB基板界面结合强度方面的研究进展,并进行了简要评述;最后,对该研究今后的发展方向进行了展望。Reliability and service life of electronic devices depend on heat dissipation capacity of the ceramic substrates to a great extent.Copper/ceramic substrates have excellent thermal conductivity and insulation properties,as well as high current carrying capacity and strength.Therefore,they have become the best choice as substrates for high-power electronic devices.As an important method to bond ceramic substrate and Cu foil,active metal brazing(AMB)has higher reliability than the direct bonding copper(DBC)technique.Even so,the interfacial bonding strength is still greatly affected by brittle phase,residual thermal stress and so on,which should be further improved.Key issues,including interfacial wetting and reaction,as well as residual stress generated during AMB,were introduced,while research progress in improving the interfacial bonding strength of the AMB substrate was summarized.Outlook on future development of this research area was speculated.
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