单根镓掺杂氧化锌微米线异质结基高亮黄光发光二极管  

High-brightness Yellow Light-emitting Diode in A Single Ga-doped ZnO∶Ga Microwire Heterojunction

作　　者：徐海英[1,2] 刘茂生 姜明明 缪长宗 王长顺[2] 阚彩侠[2] 施大宁[2] XU Hai-ying;LIU Mao-sheng;JIANG Ming-ming;MIAO Chang-zong;WANG Chang-shun;KAN Cai-xia;SHI Da-ning(College of Mathematics and Physics,Nanjing Institute of Technology,Nanjing 211167,China;College of Physics,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China)

机构地区：[1]南京工程学院数理学院,江苏南京211167 [2]南京航空航天大学物理学院,江苏南京211106

出　　处：《发光学报》2022年第8期1165-1174,共10页Chinese Journal of Luminescence

基　　金：国家自然科学基金(11974182,11874220);中央高校基本科研业务费专项资金(NC2022008);南京工程学院校级科研基金(CKJB201708,CKJA201807)资助项目。

摘　　要：基于半导体低维微纳结构构筑的可见光发光器件,特别是位于500~600 nm波段的黄绿光光源,因具有较高的发光效率、长寿命和低功耗等特点,在超高分辨率显示与照明、单分子传感和成像等领域有着广泛的应用价值。由于高性能低维黄绿色发光器件在发光材料制备、器件结构以及发光器件的“Green/yellow gap”和“Efficiency droop”等方面受到严重限制,极大地影响了低维微纳结构黄绿光发光器件的开发和应用。本文采用单根镓掺杂氧化锌(ZnO∶Ga)微米线和p型InGaN衬底构筑了异质结基黄光发光二极管,其输出波长位于580 nm附近,半峰宽大约为50 nm。随注入电流的增加,光谱的峰位和半峰宽几乎没有任何变化,也没有观察到InGaN基光源中常见的量子斯塔克效应。器件相应的色坐标始终处于黄光色域范围。更为重要的是,器件的外量子效率在大电流注入下并没有出现较大的下降。结合单根ZnO∶Ga微米线和InGaN的光致发光光谱,以及n-ZnO∶Ga/p-InGaN异质结能带结构理论,可以推断该制备器件的发光来自于ZnO∶Ga微米线和InGaN结区界面处载流子的辐射复合,器件的Droop效应得到明显抑制。实验结果表明,n-ZnO∶Ga微米线/p-InGaN异质结可用于制备高性能、高亮度的低维黄光发光二极管。Due to low-dimensional semiconductor micro/nano-structures,visible light-emitting de⁃vices,especially for green/yellow light sources locating in the wavelengths of 500-600 nm,have reached a broad audience in ultrahigh resolution display and lighting,single-photon source,singlemolecule sensing and imaging in life science and other fields.In developing high-performance green/yellow light-emitting devices,the preparation of light-emitting materials and device structures is highly restricted by the“green/yellow gap”and“efficiency droop”.In the present research,a new generation of yellow light-emitting diode,which is composed of a single Ga-doped ZnO microwire(ZnO∶Ga MW)and p-type InGaN substrate,is demonstrated at a wavelength of 580 nm together with a linewidth of about 50 nm.With increasing the drive current at high injection levels,hardly little variation in the spectral profiles,such as the main emission wavelengths and the linewidth,could be distinctly noticed,as well as the quantum Stark effect that has been normally observed in InGaN-based light sources.The color coordinate is well matched with the yellow of the REC.2020 standard.Interestingly,the external quantum efficiency of the device is relatively stable even at high current injection.By comparing with the photoluminescence properties of a ZnO∶Ga MW and pInGaN film,the energy band structure of the as-fabricated n-ZnO∶Ga/p-InGaN heterojunction emis⁃sion device was constructed.It is clearly inferred that the electroluminescence is derived from the generation of electron-hole recombination,which occurring close to the ZnO∶Ga/InGaN heterointer⁃face,instead of the p-InGaN side.The experimental results show that the as-designed n-ZnO∶Ga MW/p-InGaN heterojunction can be used to fabricate high-performance low-dimensional yellow lightemitting diodes.

关 键 词：黄光发光二极管 镓掺杂氧化锌微米线 铟镓氮 外量子效率 Droop效应 

分 类 号：TN312.8[电子电信—物理电子学]