SiGe/Si异质结PIN顶注入电光调制器的数值分析  

Numerical Analysis of SiGe/Si Heterojunction PIN Top-Injection Electro-Optic Modulators

作　　者：冯露露 冯松[1] 胡祥建 王迪 陈梦林 FENG Lulu;FENG Song;HU Xiangjian;WANG Di;CHEN Menglin(School of Science,Xi’an Polytechnic University,Xi’an 710048,China)

机构地区：[1]西安工程大学理学院,西安710048

出　　处：《西安工业大学学报》2022年第4期408-413,共6页Journal of Xi’an Technological University

基　　金：国家重点研发计划项目(2018YFB2200500);国家自然科学基金项目(61204080);国家重点实验室基金项目(SKL201804);陕西省重点研发计划项目(2022GY-012,2020KW-011);西安市科技计划项目(2020KJRC0026)。

摘　　要：针对电光调制器的调制效率低造成调制器的驱动电压较高的问题。文中基于等离子色散效应理论,利用计算机辅助设计模拟方法,设计了一种SiGe/Si异质结PIN顶注入硅基电光调制器,分析了不同结构尺寸、掺杂浓度下折射率变化、吸收系数变化和衰减等影响。研究结果表明:该器件有效增大了折射率变化和吸收系数变化,增强了电光调制器的等离子体色散效应,提高了硅基调制器的调制效率。SiGe/Si异质结PIN顶注入电光调制器的20dB衰减所需的驱动电压从1.24V降到0.99V,其调制效率约为硅基调制器的1.25倍,SiGe/Si异质结可以有效增强等离子体色散效应,提高电光调制器的调制效率,改善电光调制器的性能。The low modulation efficiency of an electro-optic modulator will result in its high driving voltage.Based on the theory of plasma dispersion effect,a SiGe/Si heterojunction PIN top-injection silicon electro-optic modulator was designed by the method of computer aided design simulation.The influences of structure size,doping concentration,refractive index,absorption coefficient and attenuation were analyzed.The results show that the device can effectively increase the changes of the refractive index and absorption coefficient,enhance the plasma dispersion effect of the electro-optic modulator,and improve the modulation efficiency of the silicon-based modulator.The driving voltage required for the 20 dB attenuation of the electro-optic modulator injected by the SiGe/Si heterojunction decreases from 1.24 V to 0.99V,and its modulation efficiency is about 1.25times that of the silicon-based modulator.It is concluded that the SiGe/Si heterojunction can effectively enhance the plasma dispersion effect,increase the modulation efficiency of the electro-optic modulator,and improve the performance of the electro-optic modulator.

关 键 词：电光调制器 硅基调制器 等离子体色散效应 SIGE/SI异质结 

分 类 号：O43[机械工程—光学工程]