衍射光学元件成套制造技术研究进展  

Research progress on complete fabrication technology of diffractive optical elements

作　　者：谢常青[1] XIE Changqing(Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029

出　　处：《光学精密工程》2022年第15期1815-1827,共13页Optics and Precision Engineering

基　　金：国家自然科学基金资助项目(No.U1832217,No.61888102);国家重点研发计划项目(No.2017YFA0206002)。

摘　　要：从图形数据处理、先进光刻、图形转移和大面积高可靠集成4方面开展衍射光学元件关键制造技术研究。在兼容标准CMOS工艺的基础上,提出了高精度、多功能(高保真、高深宽比、高面形、多元化衬基等)、大面积衍射光学元件成套制造技术。研发了精度优于2 nm的复杂图形光刻数据处理体系,提出了混合光刻方法,建立了加法(剥离、电镀)和减法(干法刻蚀、金属辅助化学刻蚀)两种类型、四种图形转移基础方法。实现了从微米尺度到亚10 nm尺度的图形生成,高宽比达12∶1的25 nmAu结构和深宽比达500∶1的30 nmAl_(2)O_(3)纳米管图形转移。在熔石英、多层膜、SiC自支撑薄膜、高面形硅片等衬基上大面积集成制造了多种衍射光学元件,最大面积为142 mm×142 mm,最大自支撑口径达70 mm,最高面形精度PV值达0.03λ,覆盖了可见光到硬X射线波段衍射光学元件的制造需求,能够应用于先进光刻机、同步辐射、激光聚变及X射线天文学中。The key fabrication technology for diffractive optical elements(DOE)was systematically investigated from the following four aspects:graphic data processing,advanced lithography,pattern transfer,and large-area integration with high reliability.Based on the standard CMOS process,a complete set of manufacturing technologies for DOE with high precision,multi-functionality(high fidelity,high aspect ratio,high surface flatness,multiple substrates,etc.),and large area was proposed.A data processing system with precision greater than 2 nm is developed for complex pattern lithography.Moreover,a hybrid lithography method was proposed and two types of basic pattern transfer techniques and four different processes are established,including additive processes(lift-off and electroplating)and subtractive processes(drying etching and low-temperature metal assisted chemical etching).Importantly,we demonstrate the pattern generation from micron to sub-10 nm scale,pattern transfer of 25 nm gold structures with aspect ratio of 12∶1,and 30 nm Al_(2)O_(3) nanotubes with aspect ratio up to 500∶1.Based on various substrates,including fused quartz,multilayer film,SiC self-supporting membrane,and wafer with high surface flatness,various large-area DOEs are integrated.The maximum area is 142 mm×142 mm,the maximum self-supporting aperture is 70 mm,and the highest surface flatness is 0.03λpeak to valley.Our proposed framework can meet the manufacturing requirements of various DOEs,covering the spectral bands ranging from visible light to hard X-rays.Various DOEs are used in four major optical projects,including advanced lithography,synchrotron radiation,laser fusion,and X-ray astronomy,as well as more than 1000 domestic and foreign universities,scientific research institutes,and high-tech enterprises.

关 键 词：衍射光学元件 先进光刻 标准CMOS工艺 GDSII数据处理 图形转移 

分 类 号：O436.1[机械工程—光学工程] O434[理学—光学] TN47[理学—物理]