受体掺杂半导体高次谐波产生的理论研究  

Theoretical Study of High-Order Harmonic Generation from Acceptor-Doped Semiconductor

作　　者：王燕锋 苗向阳[2] Wang Yanfeng;Miao Xiangyang(Department of Physics,Lvliang University,Lvliang 033001,Shanxi,China;College of Physics and Information Engineering,Shanxi Normal University,Linfen 041004,Shanxi,China)

机构地区：[1]吕梁学院物理系,山西吕梁033001 [2]山西师范大学物理与信息工程学院,山西临汾041004

出　　处：《激光与光电子学进展》2022年第13期102-106,共5页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(11974229);山西省高等学校科技创新项目(2020L0694)。

摘　　要：通过数值求解单电子近似下的一维含时薛定谔方程,从理论上研究了受体掺杂半导体高次谐波的产生。结果表明,受体掺杂后第二平台的谐波效率比未掺杂时提高了约3~4个数量级。理论分析发现,掺杂改变了半导体的能带结构,使价带与第一导带以及第一导带与第二导带之间的带隙变窄,电子更容易隧穿到更高导带,使高导带的电子布居数增大,从而提高了第二平台的谐波效率。We theoretically investigate the high-order harmonic generation from acceptor-doped semiconductors by numerically solving the one-dimensional time-dependent Schrödinger equation based on the single electron approximation.The results show that the harmonic efficiency of the second plateau from acceptor-doped semiconductors is about three to four orders of magnitude higher than those from undoped semiconductors.Theoretical analysis shows that doping changes the energy-band structure of the semiconductor,narrows the band gap between the valence band and the first conduction band,and between the first conduction band and the second conduction band.Then it is easier for electrons to tunnel into the higher conduction band,and the electron population of the high conduction band is increased,thus the harmonic efficiency of the second plateau is improved.

关 键 词：原子与分子物理学 高次谐波 受体掺杂半导体 含时薛定谔方程 

分 类 号：O437[机械工程—光学工程]