基板表面粗糙度对电阻薄膜微观形貌及电学性能的影响  

Effect of Substrate Surface Roughness on the Morphology and Electrical Properties of Resistance Films

作　　者：杨曌 李保昌 王烨 罗俊尧 陆忠成 沓世我 宁洪龙[3] YANG Zhao;LI Baochang;WANG Ye;LUO Junyao;LU Zhongcheng;TA Shiwo;NING Honglong(Guangdong Fenghua Advanced Technology Holding Co.,Ltd.,Zhaoqing 526060,China;State Key Labora-tory of Advanced Materials and Electronic Components,Zhaoqing 526060,China;School of Materials Science and Engineering,South China University of Technology,Guangzhou 510641,China)

机构地区：[1]广东风华高新科技股份有限公司,广东肇庆526060 [2]新型电子元器件关键材料与工艺国家重点实验室,广东肇庆526060 [3]华南理工大学材料科学与工程学院,广东广州510641

出　　处：《材料研究与应用》2022年第4期505-510,共6页Materials Research and Application

摘　　要：不同表面粗糙度的基板显著影响其溅射膜层的微观形貌、电阻以及残余应力,同时其本身的制备成本也相差甚远。选择表面粗糙度适合的基板,能够在保证产品性能良好、可靠性高的同时,兼顾生产成本的有效调控。基于实际生产考量,通过磁控溅射工艺制备两种Ti、TaN功能薄膜,系统性评估了表面粗糙度大范围梯度(R_(a)=20—1000 nm)变化的氧化铝基板对溅射膜层的影响,包括镀膜前后表面粗糙度、室温电阻率以及电阻温度系数(TCR)。结果表明:当基板表面粗糙度R_(a)<350 nm,镀膜后R_(a)无显著变化;当R_(a)>350 nm,随着基板R_(a)增加其镀膜后R_(a)显著降低;不同于R_(a),镀膜后功能薄膜层R_(z)明显低于基板值;Ti、TaN薄膜电阻率,随基板R_(a)的增加而增大;TaN功能薄膜TCR随基板R_(a)值的增加先增大后减小,负偏明显并保持在−500×10^(−6)-−550×10^(−6)℃^(−1)区间。Substrates with different surface roughness significantly affect the microscopic morphology,resistance and residual stress of the sputtered films,and their preparation costs are also quite different.Choosing a substrate with suitable surface roughness can ensure good product performance and high reliability,meanwhile allow the effective control of production costs.In this paper,based on practical production considerations,two functional films of Ti and TaN were prepared by magnetron sputtering processes.The influence of alumina substrates with a wide gradient of surface roughness(R_(a)=20—1000 nm)on the sputtered films was systematically evaluated,including surface roughness before and after coating,room temperature resistivity,and temperature coefficient of resistance(TCR).Experiments showed that:when the surface roughness of the substrate R_(a)<350 nm,R_(a) has no significant change after coating;when R_(a)>350 nm,R_(a) decreased significantly after coating with the increase of substrate R_(a);different from R_(a),the functional thin film layer after coating Rz was significantly lower than the substrate value;the resistivity of Ti and TaN films increased with the increase of substrate R_(a);the TCR of TaN functional films increased first and then decreased with the increase of substrate R_(a) value,and the negative bias was obvious and remained in the range of−500×10^(−6)—−550×10^(−6)°C^(−1).

关 键 词：表面粗糙度 电阻率 磁控溅射 电阻温度系数 功能薄膜 

分 类 号：TB302.1[一般工业技术—材料科学与工程]