Toward stable photoelectrochemical water splitting using NiOOH coated hierarchical nitrogen-doped ZnO-Si nanowires photoanodes  

作　　者：Indrajit V.Bagal Maheswari Arunachalam Ameer Abdullah Aadil Waseem Mandar AKulkarni Soon Hyung Kang Sang-Wan Ryu 

机构地区：[1]Department of Physics,Chonnam National University,Gwangju 61186,Republic of Korea [2]Department of Chemistry Education,Chonnam National University,Gwangju 61186,Republic of Korea [3]Optoelectronic Convergence Research Center,Chonnam National University,Gwangju 61186,Republic of Korea

出　　处：《Journal of Energy Chemistry》2022年第8期45-55,I0002,共12页能源化学（英文版）

基　　金：supported by the National Research Foundation of Korea(NRF),funded by the Ministry of Education,Science,and Technology(2018R1A6A1A03024334,NRF-2019R1A2C1006360);supported by Basic Science Research Capacity Enhancement Project through Korea Basic Science Institute(National Research Facilities and Equipment Center)grant funded by the Ministry of Education(2019R1A6C1010024)。

摘　　要：Photoelectrochemical(PEC)water splitting is regarded as the most promising method to generate“green hydrogen”,and zinc oxide(ZnO)has been identified as one of the promising candidates for PEC water splitting owing to its straddling band alignment with the water redox level.However,its PEC performance is limited due to its wide bandgap and anticipated by photocorrosion in an aqueous medium.In this work,we present strategic improvements in the PEC water splitting performance of ZnO nanowires(NWs)by nitrogen(N)-doping along with photostability by the core–shell deposition of a NiOOH cocatalyst.Highly crystalline hierarchical ZnO NWs were fabricated on Si NWs(ZnO-Si HNWs)using a metal organic chemical vapor deposition approach.The NWs were then N-doped by annealing in an NH_(3) atmosphere.The N-doped ZnO-Si HNWs(N:ZnO-Si HNWs)showed enhanced visible light absorption,and suppressed recombination of the photogenerated carriers.As compared to ZnO-Si HNWs(0.045 m A cm^(-2) at 1.23 V vs RHE),the N:ZnO-Si HNWs(0.34 m A cm^(-2) at 1.23 V vs RHE)annealed in NH^(3) ambient for 3 h at 600℃showed 7.5-fold enhancement in the photocurrent density.NiOOH-deposited N:ZnO-Si HNW photoanodes with a photostability of 82.21%over 20000 s showed 10.69-fold higher photocurrent density(0.48 m A cm^(-2) at 1.23 V vs RHE)than ZnO-Si HNWs.

关 键 词：Hierarchical NWs MOCVD NiOOH cocatalyst N-DOPING Photoelectrochemical water splitting 

分 类 号：TQ116.2[化学工程—无机化工] TQ426