低损耗氮化硅延迟线芯片及组件验证  

Low-Loss SiN Delay Line Chip and Module Verification

作　　者：刘大鹏 冯靖 廖海军 杨忠华 崇毓华 崔乃迪 冯俊波 郭进 LIU Dapeng;FENG Jing;LIAO Haijun;YANG Zhonghua;CHONG Yuhua;CUI Naidi;FENG Junbo;GUO Jin(Chongqing United Microelectronics Center Co,Ltd,Chongqing 404100,China;The 38th Research Institute of China Electronics Technology Group Corporation,Hefei 230088,China)

机构地区：[1]联合微电子中心有限责任公司,重庆404100 [2]中国电子科技集团公司第三十八研究所,安徽合肥230088

出　　处：《雷达科学与技术》2022年第4期403-408,共6页Radar Science and Technology

基　　金：国家自然科学基金(No.62105051)。

摘　　要：光控相控阵技术有望解决传统相控阵雷达中电相移器带来的波束倾斜和波形展宽问题,基于光子集成技术的延迟线芯片与波束形成技术受到了广泛研究。本文研制了低损耗MZI步进型延迟线芯片,其延时步进6.4 ps,位数5 bit,最大延时量198.4 ps,波导损耗<0.1 dB/cm。实现了芯片的模块化封装,延时状态切换速度优于100μs, 1~20 GHz工作频率范围,其电幅度一致性±4.5 dB,相位一致性±23°,光功率一致性±1.5 dB,延时量误差为-0.6~+2.0 ps。本文研制了八阵元光控波束形成网络样机,实现了从-35°到+35°的波束扫描,验证了基于低损耗氮化硅延迟线芯片的波束形成技术。Optical phased array technology can avoid the beam tilting and broadening caused by electrical phase shifters in the conventional phased array radar. Delay line chip and beamforming based on the integrated photonic technique are widely studied. The low-loss MZI step delay line chip is fabricated, with 6.4 ps delay step, 5 bits, 198.4 ps maximum delay and 0.1 dB/cm waveguide loss. The designed chip is also packaged to be the module, which performs 100 μs switching speed, ±4.5 dB electric amplitude consistency, ±23° phase consistency, ±1.5 dB optical amplitude consistency and-0.6~+2.0 ps time delay error under 1~20 GHz opera-ting frequency range. The optical beamforming prototype with 8 arrays is fabricated to realize the beam scanning from-35° to +35° and demonstrate the beamforming technique based on low-loss SiN delay line chip.

关 键 词：波束形成 光控相控阵 光子集成 氮化硅 延迟线芯片 

分 类 号：TN491[电子电信—微电子学与固体电子学] TN958.92