用于位置检测的光电二极管参数分析  

Parameter Analysis of Photodiode for Position Detection

作　　者：谭立杰[1] 魏祥英[1] 孙敏[1] 闫芸 TAN Lijie;WEI Xiangying;SUN Min;YAN Yun(The 45th Research Institute of CETC,Beijing 100176,China)

机构地区：[1]中国电子科技集团公司第四十五研究所,北京100176

出　　处：《电子工业专用设备》2022年第3期61-64,共4页Equipment for Electronic Products Manufacturing

摘　　要：PIN型光电二极管由于响应速度快,暗电流低,噪声低等特点越来越多地被应用到位置检测中,如何根据设计需求对光电二极管进行选型很重要。通过分析光电二极管的光灵敏度、暗电流、噪声等效功率和响应速度性能参数,分解光电传感器位置检测系统的设计需求,提出了光电二极管的选择依据。PIN photodiode is more and more used in position detection,because of its fast response,low dark current and low noise.In this way,the design and selection becomes particularly important.According to the characteristics of position detection,by analyzing the performance parameters of photodiode,such as light sensitivity,dark current,noise equivalent power and response speed,and the design requirement of photoelectric sensor position detection system is decomposed,the selection basis of photodiodes is put.

关 键 词：光电二极管 位置检测 参数特性 响应速度 

分 类 号：TN707[电子电信—电路与系统]