Orbit-Transfer Torque Switching  

作　　者：Yeliang Wang 王业亮(School of Integrated Circuits and Electronics,MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices,Beijing Institute of Technology,Beijing 100081,China)

机构地区：[1]School of Integrated Circuits and Electronics,MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices,Beijing Institute of Technology,Beijing 100081,China

出　　处：《Chinese Physics Letters》2022年第7期1-2,共2页中国物理快报（英文版）

摘　　要：In the post-Moore era, memory devices with smaller sizes, lower energy consumption, and higher reliability are desired. As a classic type of non-volatile memory, magnetic random-access memory(MRAM)is outstanding, since it keeps data storage by magnetic states(electron spin) instead of electron charges.

关 键 词：SIZES magnetic DESIRED 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]