A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga_(2)O_(3)photoconductor with high photo response  

作　　者：Zeng Liu Yu-Song Zhi Mao-Lin Zhang Li-Li Yang Shan Li Zu-Yong Yan Shao-Hui Zhang Dao-You Guo Pei-Gang Li Yu-Feng Guo Wei-Hua Tang 刘增;支钰崧;张茂林;杨莉莉;李山;晏祖勇;张少辉;郭道友;李培刚;郭宇锋;唐为华(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China;National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies,Nanjing University of Posts and Telecommunications,Nanjing 210023,China;China Academy of Launch Vehicle Technology,Beijing 100076,China;School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,China;Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 518060,China;Center for Optoelectronics Materials and Devices,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,China)

机构地区：[1]College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China [2]National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies,Nanjing University of Posts and Telecommunications,Nanjing 210023,China [3]China Academy of Launch Vehicle Technology,Beijing 100076,China [4]School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,China [5]Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 518060,China [6]Center for Optoelectronics Materials and Devices,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,China

出　　处：《Chinese Physics B》2022年第8期700-704,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61774019);Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921115 and XK1060921002)。

摘　　要：A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is introduced.The Ga2O_(3)thin film is prepared through the metalorganic chemical vapor deposition technique,then used to construct the photodetector array via photolithography,lift-off,and ion beam sputtering methods.The one photodetector cell shows dark current of 1.94 p A,phototo-dark current ratio of 6×10_(7),photo responsivity of 634.15 A·W^(-1),specific detectivity of 5.93×1011cm·Hz1/2·W^(-1)(Jones),external quantum efficiency of 310000%,and linear dynamic region of 108.94 d B,indicating high performances for DUV photo detection.Furthermore,the 16-cell photodetector array displays uniform performances with decent deviation of 19.6%for photo responsivity.

关 键 词：Ga_(2)O_(3) array photodetector MOCVD deep UV detection 

分 类 号：TN23[电子电信—物理电子学] TN15