Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p^(+)-GaN contacting layers  

作　　者：Minglong Zhang Masao Ikeda Siyi Huang Jianping Liu Jianjun Zhu Shuming Zhang Hui Yang 

机构地区：[1]School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China [2]Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Journal of Semiconductors》2022年第9期81-86,共6页半导体学报（英文版）

基　　金：the National Key Research and Development Program of China(2017YFE0131500);the Key Research and Development Program of Guangdong Province(2020B090922001);National Natural Science Foundation of China(61834008);Key Research and Development Program of Jiangsu province(BE2020004,BE2021008-1);Guangdong Basic and Applied Basic Research Foundation(2019B1515120091).

摘　　要：Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting layers.The effects of surface chemical treatment and annealing temperature were ex-amined.The optimal annealing temperature was determined to be 550°C,above which the sheet resistance of the samples de-graded considerably,suggesting that undesirable alloying had occurred.Pd-containing metal showed~35%lower com-pared to that of single Ni.Very thin(2-3.5 nm thick)p-InGaN contacting layers grown on 20-25 nm thick p^(+)-GaN layers exhib-ited one to two orders of magnitude smaller values of compared to that of p^(+)-GaN without p-InGaN.The current density de-pendence of,which is indicative of nonlinearity in current-voltage relation,was also examined.The lowest achieved through this study was 4.9×10^(-5)Ω·cm^(2)@J=3.4 kA/cm^(2).

关 键 词：GAN ohmic contact specific contact resistance 

分 类 号：TG178[金属学及工艺—金属表面处理]