射频磁控溅射制备的CdSe薄膜的光电学性质  

Optical and electrical properties of CdSe thin films prepared by RF magnetron sputtering

作　　者：管雪 金健 顾广瑞[1] GUAN Xue;JIN Jian;GU Guangrui(College of Science,Yanbian University,Yanji 133002,China)

机构地区：[1]延边大学理学院,吉林延吉133002

出　　处：《延边大学学报（自然科学版）》2022年第2期138-142,共5页Journal of Yanbian University（Natural Science Edition）

基　　金：国家自然科学基金(51272224);吉林省自然科学基金(20210101163JC)。

摘　　要：采用射频磁控溅射技术在不同溅射功率下制备了CdSe薄膜,并利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量色散X射线光谱仪(EDAX)、紫外可见近红外(UV-VIS-NIR)分光光度计和霍尔效应测试仪研究了溅射功率对薄膜的结构和光电学性质的影响.研究表明:增加溅射功率有利于增强薄膜的结晶性能;随着溅射功率的增加,薄膜的光学带隙和电阻率逐渐减小,载流子浓度逐渐增加,即薄膜的光电性能不断增强.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.In this paper,CdSe thin films are deposited by radio frequency magnetron sputtering technology at different sputtering powers.The influences of sputtering power on the structure,optical and electrical properties of CdSe thin films are studied by X-ray diffractometer(XRD),field emission scanning electron microscope,ultraviolet visible near infrared(UV-VIS-NIR) spectrophotometer and Hall effect tester.The results show that increasing the sputtering power can enhance the crystallinity of the films;With the increase of sputtering power,both of the optical bandgap and resistivity of the film decrease gradually,and the carrier concentration increases gradually.Therefore,the photoelectric performance of the thin film is constantly enhanced.The research results can provide reference for the application of CdSe thin films in optoelectronic devices.

关 键 词：CDSE薄膜 磁控溅射 光学性质 电学性质 

分 类 号：O484.4[理学—固体物理]