Antiferromagnetic spintronics: An overview and outlook  

作　　者：Danrong Xionga Yuhao Jiang Kewen Shi Ao Du Yuxuan Yao Zongxia Guo Daoqian Zhu Kaihua Cao Shouzhong Peng Wenlong Cai Dapeng Zhu Weisheng Zhao 

机构地区：[1]Fert Bejing Institute,MIT Key Laboratory of Spintronics,School of Integated Circuit Science and Engineering,Beihang University,Bejing 10191,China [2]Beihang-Goertek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266oo,China

出　　处：《Fundamental Research》2022年第4期522-534,共13页自然科学基础研究（英文版）

基　　金：the National Key Research and Development Program of China(Grants No.2021YFB3601303,2021YFB3601300);the National Natural Science Foundation of China(Grants No.92164206,61904009,62001014 and 61627813)for their financial support of this work.

摘　　要：Over the pas few decades,the diversified development of antiferomagnetic spintronics has made antiferomagnets(AFMs)interesting and very useful.After tough challenges,the applications of AFMs in electronic devices have transitioned from focusing on the interface coupling features to achieving the manipulation and detection of AFMs.As AFMs are internally magnetic,taking full use of AFMs for information storage has been the main target of research.In this paper,we provide a comprehensive description of AFM spintronics applications from the interface coupling,read-out operations,and writing manipulations perspective.We examine the early use of AFMs in magnetic recordings and conventional magnetoresistive random-access memory(MRAM),and review the latest mechanisms of the manipulation and detection of AFMs.Finally,based on exchange bias(EB)manipulation,a high-performance EB-MRAM is introduced as the next generation of AFM-based memories,which provides an effective method for read-out and writing of AFMs and opens a new era for AFM spintronics.

关 键 词：ANTIFERROMAGNETS MRAM SPINTRONICS Spin-orbit torque Exchange bias 

分 类 号：O413[理学—理论物理]