一种复合终端逆阻IGBT数值仿真分析  

Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT

作　　者：崔磊 杨通 张如亮[2] 马丽[3] 李旖晨 CUI Lei;YANG Tong;ZHANG Ruliang;MA Li;LI Yichen(State Grid Smart Grid Research Institute Co.Ltd.,Beijing 102209,China;Department of Electronic Engineering,Xi'an University of Technology,Xi'an 710048,China;Department of Applied Physics,Xi'an University of Technology,Xi'an 710048,China)

机构地区：[1]国网智能电网研究院有限公司,北京102209 [2]西安理工大学电子工程系,陕西西安710048 [3]西安理工大学应用物理系,陕西西安710048

出　　处：《中国电力》2022年第9期98-104,共7页Electric Power

基　　金：国家重大研发计划资助项目(2015ZX02301002);国网智能电网研究院有限公司科技项目(53ZCGB190001)。

摘　　要：绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)本身不具有反向阻断能力,因此在电路中通常与二极管组合使用。为降低使用成本,减小寄生电感,续流二极管与IGBT通过工艺集成在同一芯片上,由此提出了具有反向阻断能力的逆阻型IGBT。针对常规逆阻IGBT终端面积大的问题,提出了一种改进型复合终端结构,采用双掺杂场限环,在P型场限环旁边引入N型轻掺杂区。改进结构减小了耗尽区横向扩展速率,增强器件可靠性,节省终端面积占用并提高了终端效率。Insulated gate bipolar transistor(IGBT) is usually used in combination with power diode in power electric circuit because it has no reverse blocking ability. In order to reduce cost and parasitic inductance, the freewheeling diode and IGBT are integrated by process method, and a reverse blocking insulated gate bipolar transistor(RB-IGBT) is thus proposed. For reducing the terminal area of conventional reverse blocking IGBT, an improved composite terminal structure is proposed. The double doped field limiting ring is used to introduce a n-type low doping region near the p-type field limiting ring, which can reduce the lateral expansion rate of depletion region, increase device reliability, improve terminal efficiency and save terminal size.

关 键 词：绝缘栅双极型晶体管 逆阻 场限环 复合终端 双掺杂场限环 

分 类 号：TN322.8[电子电信—物理电子学]