新型薄膜材料在电子倍增器中的应用研究  

Research on the application of new thin film material in electron multipliers

作　　者：闫保军 刘术林[1,2] 温凯乐 王玉漫 张斌婷 徐美杭 韦雯露[1,2] 彭华兴 YAN Baojun;LIU Shulin;WEN Kaile;WANG Yuman;ZHANG Binting;XU Meihang;WEI Wenlu;PENG Huaxing(State Key Laboratory of Particle Detection and Electronics,Institute of High Energy Physics of Chinese Academy of Sciences,Beijing 100049,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院高能物理研究所核探测与核电子学国家重点实验室,北京100049 [2]中国科学院大学,北京100049

出　　处：《空间电子技术》2022年第4期85-92,共8页Space Electronic Technology

基　　金：国家自然科学基金(编号:11975017,11675278,11535014);核探测与核电子学国家重点实验室项目(编号:SKLPDE-ZZ-202215)。

摘　　要：为了提高核探测、航空航天、国防和精密科学仪器等领域中传统电子倍增器的性能,使其在较低的工作电压和入射电子能量下实现高增益、低噪声、长寿命的目标,在材料制备、二次电子发射测试和电子倍增器性能优化等方面开展了大量研究工作。利用原子层沉积(atomic layer deposition,ALD)技术研制了具有较高二次电子产额(secondary electron yield,SEY)的新型薄膜材料,研究了元素掺杂和表面修饰改善材料二次电子发射特性的方法,详细测试了薄膜材料的二次电子发射特性参数。利用ALD技术将新型薄膜材料成功应用于微通道板(microchannel plate,MCP)和单通道电子倍增器(channeltron electron multiplier,CEM)中,测试结果如下:相同工作电压下,镀膜后MCP组件的增益、单电子分辨率、峰谷比分别改善了约166%、17%和260%;对于单个CEM,镀膜前工作电压为2700 V时增益才能达到10^(8),而镀膜后1600 V下即可达到相同增益(工作电压降低了1100 V),并且其它各项参数(分辨率≤26%,累计拾取电荷量≥15.62 C)均得到改善。该研究成果在高增益、长寿命新型电子倍增器研制及其在荷电粒子与含能光子探测中的应用具有重要意义。In order to improve the performance of traditional electron multipliers in the fields of nuclear detection,aerospace,national defense and precision scientific instruments,it can achieve the goals of high gain,good signal-to-noise ratio and long life under lower operating voltage and incident electron energy.This article has carried out a lot of research work on material preparation,secondary electron emission test and performance optimization of electron multipliers.A new thin film material with high secondary electron yield(SEY)is developed by atomic layer deposition(ALD)technology.The methods of element doping and surface modification to improve the secondary electron emission characteristics of the material are studied,and the secondary electron yield of the thin film material are tested in detail.The new thin film materialis successfully applied to the microchannel plate(MCP)and channeltron electron multiplier(CEM)by ALD technology.The test results are as follows:under the same working voltage,the gain,single-electron resolution,the peak-to-valley ratio are improved by about 166%,17%and 260%respectively;for a single CEM,the gain can only reach 10^(8) when the operating voltage is 2700 V before coating,and the same gain can be achieved at 1600 V after coating(operating voltage is reduced by 1100 V),and other parameters(resolution≤26%,accumulative output charge≥15.62 C)have been improved.The research results in this article are of great significance in the development of new electron multipliers with high gain and long lifetime and their application in the detection of charged particles and energetic photons.

关 键 词：二次电子产额 原子层沉积 微通道板 单通道电子倍增器 粒子探测 

分 类 号：O462[理学—电子物理学] V443[理学—物理]